单片式 beta-Ga2O3 双向 MOSFET
Monolithic beta-Ga2O3 Bidirectional MOSFET
AI总结：
本文报道了一种基于 beta-Ga2O3 的单片双向双栅 MOSFET，具备四模式工作能力、低阈值电压、高开关比及超过 ±350V 的击穿电压，适用于功率转换系统。
摘要：
我们报道了一种在 epitaxially grown beta-Ga2O3 上制造的单片双向双栅金属氧化物半导体场效应晶体管 (MOSFET)，展示了高效的双向导通和阻断能力。该器件具有两个独立控制的栅极，可在四种不同模式下工作，为在第一和第三象限管理电流和电压提供了灵活性。这种多功能性使其成为各种功率转换系统应用的理想选择。该器件在低负阈值电压下运行（两个栅极均约为 -2.4 V），具有零开启漏电压和约 500 ohm-mm 的导通电阻。它在所有三种导通模式下均表现出 1e7 的高通断电流比。在阻断模式下，测得器件击穿电压超过 +-350 V，电流限值为 0.5 mA/mm。该器件的估算击穿场强和功率品质因数分别为 0.35 MV/cm 和 1.6 MW/cm2。
英文摘要：
We report a monolithic bidirectional dual-gate metal-oxide-semiconductor field effect transistor (MOSFET) fabricated on epitaxially grown beta-Ga2O3, demonstrating efficient two-way conduction and blocking. It features two independently controlled gates and operates in four distinct modes, offering flexibility in managing current and voltage in the first and third quadrants. This versatility makes it ideal for various power conversion system applications. The device operates at a low negative threshold voltage (~-2.4 V for both gates) with a zero turn-on drain voltage and an on-resistance of approximately 500 ohm-mm. It exhibits a high on/off current ratio of 1e7 in all three conducting modes. In the blocking mode, the device breakdown was measured to be more than +-350 V with a current compliance of 0.5 mA/mm. The estimated breakdown field and power figure of merit for the device are 0.35 MV/cm and 1.6 MW/cm2 respectively.
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