利用紧耦合喷淋头MOCVD反应器在蓝宝石上AlN模板上演示具有>$10^{15}/cm^3$自由载流子浓度的Si掺杂富Al薄再生长Al(Ga)N薄膜
Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with $\gt10^{15}/cm^3$ free carrier concentration using close-coupled showerhead MOCVD reactor
AI总结：
该研究通过优化紧耦合喷淋头MOCVD与脉冲沉积条件，在蓝宝石上AlN模板制备薄型Si掺杂富Al Al(Ga)N，实现高可控Al组分和高自由载流子浓度。
摘要：
采用金属有机化学气相沉积（MOCVD）技术，在蓝宝石上AlN模板上沉积了Si掺杂的富Al（Al>0.85）薄再生长Al(Ga)N层。通过优化温度、V/III比、沉积速率和Si浓度等沉积条件，使Si掺杂富Al Al(Ga)N薄膜获得了高电荷载流子浓度（>$10^{15}/cm^3$）。采用脉冲沉积条件，以在使用紧耦合喷淋头反应器沉积的AlGaN材料中实现大于95%的可控Al组分，并防止非预期的Ga并入。此外，通过改变再生长Al(Ga)N层的厚度，观察了再生长界面处非故意Si并入对自由电荷载流子浓度的影响。与此前报道的采用MOCVD技术沉积、厚度≥400 nm的n型Al(Ga)N薄膜相比，厚度<300 nm的Al0.97Ga0.03N和AlN薄膜分别实现了$4.8×10^{16}/cm^3$和$7.5×10^{15}/cm^3$的最高电荷载流子浓度。
英文摘要：
Thin Si-doped Al-rich (Al>0.85) regrown Al(Ga)N layers were deposited on AlN on Sapphire template using metal-organic chemical vapor deposition (MOCVD) techniques. The optimization of the deposition conditions such as temperature, V/III ratio, deposition rate, and Si concentration resulted in a high charge carrier concentration (>$10^{15}/cm^{3}$) in the Si-doped Al-rich Al(Ga)N films. A pulsed deposition condition was employed to achieve a controllable Al composition greater than 95% and to prevent unintended Ga incorporation in the AlGaN material deposited using the close-coupled showerhead reactor. Also, the effect of unintentional Si incorporation on free charge carrier concentration at the regrowth interface was observed by varying the thickness of the regrown Al(Ga)N layer. A maximum charge carrier concentration of $4.8\times 10^{16}/cm^3$ and $7.5\times 10^{15}/cm^3$ were achieved for Al0.97Ga0.03N and AlN films with thickness <300 nm compared to previously reported n-Al(Ga)N films with thickness $\ge$400 nm deposited using MOCVD technique.
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