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arXiv 2407.08736cond-mat.mes-hallcond-mat.str-elcond-mat.supr-conhep-th
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三维相互作用掺杂拓扑绝缘体中的超导电性

Superconductivity in three-dimensional interacting doped topological insulators

Andras L. Szabo, Bitan Roy

AI总结:

该研究通过重整化群分析发现,三维掺杂狄拉克绝缘体中自旋和宇称排斥相互作用分别促进s波和p波配对,为掺杂窄带隙半导体及拓扑材料的超导电性提供理论解释。

摘要:

三维掺杂狄拉克绝缘体在正常态下形成简单连通(在拓扑和普通区域)和环形(在拓扑区域深处)的费米面(FSs),并允许自旋相反($U_1$)和宇称相反($U_2$)本征值的费米子之间的在位排斥。通过由合适的$ε$展开控制的无偏leading-order(单圈)重整化群分析,我们表明该系统对标量$s$-波和奇宇称赝标量$p$-波配对的成核表现出强烈倾向,分别由排斥性$U_1$和$U_2$相互作用促进,而与底层FS拓扑无关。我们的结果可能与各种掺杂窄带隙半导体中观察到的超导电性相关,且理论基础可轻松应用于研究各种掺杂拓扑材料中的类似现象。

英文摘要:

Three-dimensional doped Dirac insulators foster simply connected (in both topological and trivial regimes) and annular (deep inside the topological regime) Fermi surfaces (FSs) in the normal state, and allow on-site repulsions among fermions with opposite spin ($U_1$) and parity ($U_2$) eigenvalues. From an unbiased leading-order (one-loop) renormalization group analysis, controlled by a suitable $ε$ expansion, we show that this system develops a strong propensity toward the nucleation of scalar $s$-wave and odd-parity pseudoscalar $p$-wave pairings, favored by repulsive $U_1$ and $U_2$ interactions, respectively, irrespective of the underlying FS topology. Our results can be pertinent for the observed superconductivity in various doped narrow gap semiconductors, and the theoretical foundation can readily be applied to investigate similar phenomenon in various doped topological materials.

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