Trikarenos：一款基于RISC-V的28nm容错SoC的设计与实验表征
Trikarenos: Design and Experimental Characterization of a Fault-Tolerant 28nm RISC-V-based SoC
AI总结：
本研究针对28nm RISC-V容错SoC Trikarenos开展辐射实验与仿真故障注入，验证了其ECC擦洗和三核锁步机制的容错能力，量化了单粒子翻转截面等可靠性指标。
摘要：
基于RISC-V的容错片上系统（SoC）设计对新一代汽车和航天SoC架构至关重要。然而，可靠性评估需要在受控辐射剂量下进行表征，才能准确量化流片后设计的容错能力。本工作分析了采用台积电28nm工艺实现的Trikarenos SoC设计在大气中子和200 MeV质子辐射下的单粒子翻转（SEU）脆弱性，并将这些结果与基于仿真的故障注入进行对比。纠错码（ECC）保护存储器中的所有故障都由擦洗器纠正，估计每位截面最高达$1.09 \ imes 10^{-14}$ cm$^2$ bit$^{-1}$。此外，Trikarenos中实现的三核锁步（TCLS）机制得到验证，可纠正影响截面最高达$3.23 \ imes 10^{-11}$ cm$^2$的错误，剩余不可纠正脆弱性低于$5.36 \ imes 10^{-12}$ cm$^2$。将流片芯片的实验分析与仿真中的门级故障注入相结合时，注入SoC的故障中有99.10%产生了正确结果，而注入TCLS保护核心的故障100%得到正确处理。所有注入故障中有12.28%触发了TCLS恢复，这表明有效触发器截面约为最高$1.28 \ imes 10^{-14}$ cm$^2$/FF。
英文摘要：
RISC-V-based fault-tolerant system-on-chip (SoC) designs are critical for the new generation of automotive and space SoC architectures. However, reliability assessment requires characterization under controlled radiation doses to accurately quantify the fault tolerance of the fabricated designs. This work analyzes the Trikarenos design, a SoC implemented in TSMC 28nm, for single event upset (SEU) vulnerability under atmospheric neutron and 200 MeV proton radiation, comparing these results to simulation-based fault injection. All faults in error correction codes (ECC) protected memory are corrected by a scrubber, showing an estimated cross-section per bit of up to $1.09 \times 10^{-14}$ cm$^2$ bit$^{-1}$. Furthermore, the triple-core lockstep (TCLS) mechanism implemented in Trikarenos is validated and is shown to correct errors affecting a cross-section up to $3.23 \times 10^{-11}$ cm$^2$, with the remaining uncorrectable vulnerability below $5.36 \times 10^{-12}$ cm$^2$. When augmenting the experimental analysis of fabricated chips with gate-level fault injection in simulation, 99.10 % of injections into the SoC produced correct results, while 100 % of injections in the TCLS-protected cores were handled correctly. With 12.28 % of all injected faults leading to a TCLS recovery, this indicates an approximate effective flip-flop cross-section of up to $1.28 \times 10^{-14}$ cm$^2$/FF.
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