Gatemonium：一种电压可调的Fluxonium
Gatemonium: A Voltage-Tunable Fluxonium
AI总结：
提出基于超导体-半导体混合平台的电压可调fluxonium量子比特gatemonium，通过栅极电压控制约瑟夫森能并表征其混合光谱与时域特性，为电压可调架构提供新方向。
摘要：
我们提出了一种基于全超导体-半导体混合平台的fluxonium量子比特新样式——gatemonium。其线性电感由600个平面Al-InAs约瑟夫森结（JJs）串联实现。通过用栅极电压调节单个结，我们展示了对有效约瑟夫森能的静电控制，从而调节了虚拟相位粒子的权重。对gatemonium跃迁的单音和双音光谱分析进一步揭示了混合等离激元-通量谱的细节。考虑到单个结的非正弦电流-相位关系，我们拟合了测量光谱以提取充电能和电感能。我们在具有不同充电能和JJ阵列电感的第二个gatemonium器件中对等离激元模式进行了时域表征。我们讨论了该平台在栅极电压可调、高等离子体频率、增强阻抗结阵列以及电压可调架构的增强相干时间方面的未来方向。
英文摘要：
We present a new style of fluxonium qubit, gatemonium, based on an all superconductorsemiconductor hybrid platform. The linear inductance is achieved using six hundred planar Al-InAs Josephson junctions (JJs) in series. By tuning the single junction with a gate voltage, we demonstrate electrostatic control of the effective Josephson energy, tuning the weight of the fictitious phase particle. One and two-tone spectroscopy of the gatemonium transitions further reveal details of the hybrid plasmon-fluxon spectrum. Accounting for the nonsinusoidal current-phase relation of the single junction, we fit the measured spectra to extract charging and inductive energies. We conduct time domain characterization of the plasmon modes in a second gatemonium device with different charging energy and JJ array inductance. We discuss future directions for this platform in gate voltage-tunable, high plasma frequency, enhanced impedance junction arrays, and enhanced coherence times for voltage tunable architectures.
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