在Si光子学平台上的锐钛矿TiO$_2$中隔离单个Er量子发射体
Isolation of individual Er quantum emitters in anatase TiO$_2$ on Si photonics
AI总结：
本研究展示了在单片集成于SOI光子学平台的CMOS兼容TiO$_2$薄膜中，成功实现单个Er$^{3+}$离子的光学隔离，为构建可扩展的量子光子学封装奠定基础。
摘要：
固态材料中的缺陷和掺杂原子是实现单光子源和量子存储器的有前景的平台，这些是长距离量子网络所需的量子中继器的基本构建模块。特别是，三价铒（Er$^{3+}$）因其将C波段电信光跃迁与基于自旋的存储器平台耦合而备受关注。为了在量子互联网所需规模上生产量子中继器，必须将这些必要的构建模块与成熟且可扩展的半导体工艺集成。在这项工作中，我们展示了在单片集成于绝缘体上硅（SOI）光子学平台的CMOS兼容二氧化钛（TiO$_2$）薄膜中，对单个Er$^{3+}$离子的光学隔离。我们的结果展示了朝着实现基于Er$^{3+}$掺杂薄膜的单片集成且可扩展的量子光子学封装迈出的第一步。
英文摘要：
Defects and dopant atoms in solid state materials are a promising platform for realizing single photon sources and quantum memories, which are the basic building blocks of quantum repeaters needed for long distance quantum networks. In particular, trivalent erbium (Er$^{3+}$) is of interest because it couples C-band telecom optical transitions with a spin-based memory platform. In order to produce quantum repeaters at the scale required for a quantum internet, it is imperative to integrate these necessary building blocks with mature and scalable semiconductor processes. In this work, we demonstrate the optical isolation of single Er$^{3+}$ ions in CMOS-compatible titanium dioxide (TiO$_2$) thin films monolithically integrated on a silicon-on-insulator (SOI) photonics platform. Our results demonstrate a first step toward the realization of a monolithically integrated and scalable quantum photonics package based on Er$^{3+}$ doped thin films.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
