二维材料在忆阻器中大规模集成的开发与优化
Development and optimization of large-scale integration of 2D material in memristors
AI总结：
本文开发并比较两种CMOS兼容的MoS₂忆阻器制备方案，通过去除3 nm聚合物污染层提升开关性能与可重复性，并结合表征提出晶界传导开关机制。
摘要：
诸如过渡金属二硫族化合物（TMD）之类的二维（2D）材料已被证明是在若干技术中替代硅以实现增强性能的重要候选材料。在此方面，尚存的两个挑战是TMD的晶圆级生长，以及使用兼容洁净室的工艺将其集成到可运行器件中。在本工作中，开发了两种不同的CMOS兼容方案，用于制造基于MoS₂的忆阻器，并对所得性能进行了比较。在工艺的每个阶段，通过拉曼光谱和X射线光电子能谱对MoS₂的质量进行表征。在第一种方案中，MoS₂的结构在转移和图案化工艺期间得到保持。然而，MoS₂表面残留有最小厚度为3 nm的聚合物层，限制了电学开关性能。在第二种方案中，污染层被完全去除，从而带来改善的电学开关性能和可重复性。基于物理化学和电学结果，从通过晶界传导的角度讨论了开关机制。
英文摘要：
Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates to replace silicon in several technologies with enhanced performances. In this respect, the two remaining challenges are the wafer scale growth of TMDs and their integration into operational devices using clean room compatible processes. In this work, two different CMOS-compatible protocols are developed for the fabrication of MoS$_2$-based memristors, and the resulting performances are compared. The quality of MoS$_2$ at each stage of the process is characterized by Raman spectroscopy and x-ray photoemission spectroscopy. In the first protocol, the structure of MoS$_2$ is preserved during transfer and patterning processes. However, a polymer layer with a minimum thickness of 3 nm remains at the surface of MoS$_2$ limiting the electrical switching performances. In the second protocol, the contamination layer is completely removed resulting in improved electrical switching performances and reproducibility. Based on physico-chemical and electrical results, the switching mechanism is discussed in terms of conduction through grain boundaries.
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