基于PVK:rGO复合材料的忆阻器器件的散斑图样分析
Speckle pattern analysis of PVK:rGO composite based memristor device
AI总结：
本文提出利用散斑图样分析对PVK:rGO复合忆阻器进行非破坏性表征，通过原位采集不同阻态的散斑并进行统计后处理，揭示其导电机理与开关行为。
摘要：
忆阻器有望成为神经形态系统和开关应用的基础器件。例如，由聚(N-乙烯基咔唑)与还原石墨烯复合材料的夹层结构置于非对称电极（ITO/PVK:rGO/Al）之间制成的器件，表现出双稳态阻变行为。在恒定外加电压下，根据其电阻状态（开态或关态）的不同，该器件可能表现出两种不同的电阻率。通过控制PVK聚合物中氧化石墨烯的掺杂量，可以优化忆阻器的性能。为了评估器件在开态与关态之间切换时的性能，光学表征方法因其非破坏性和远程特性而极具前景。在此，我们利用散斑图样（SP）分析对该忆阻器器件进行表征。散斑图样是多个具有随机相对相位的光波相互干涉的结果，可通过不同机制产生，例如来自漫射材料的散射。因此，SP可用于研究此类样品，因为它们包含大量可供统计处理的信息。实验范式包括在不同状态下对PVK:rGO进行原位SP采集，随后进行统计后处理，以考察其导电机理。这些统计参数的变化归因于在外加电压下PVK:rGO样品的电阻状态，并与器件的物理开关机制相关。电阻/导电状态反过来又取决于PVK:rGO忆阻器的活性和性质，以及由载流子密度变化引起的额外非均匀性。本光学方法有望作为一种台式装置，用于在类似器件运行期间对其进行表征。
英文摘要：
The memristors are expected to be fundamental devices for neuromorphic systems and switching applications. For example, the device made of a sandwiched layer of poly(N-vinylcarbazole) and reduced graphene composite between asymmetric electrodes (ITO/PVK:rGO/Al) exhibits bistable resistive switching behavior. Depending on the resistance state of the (ON-state or OFF-state) at a constant applied voltage, it may show two different resistivities. The performance of the memristor can be optimized by controlling the doping amount of graphene oxide in the PVK polymer. To assess the performance of the device, when it switches between ON and OFF states, optical characterization approaches are highly promising due to their non-destructive and remote nature. Here, we characterize the memristor device by the use of speckle pattern (SP) analysis. The speckle pattern is the interference of multiple light waves with random relative phases, which is generated via different mechanisms such as scattering from diffusive materials. Therefore, SPs can be used to investigate such samples as they include a huge amount of information to be statistically elaborated. The experimental paradigm includes \textit{in situ} acquisition of SPs of the PVK:rGO in different states followed by statistical post-processing toward examining its conduction mechanism. The variations in these statistical parameters are attributed to the resistance state of the PVK:rGO samples under the applied voltage with regard to the physical switching mechanism of the device. The resistance/conduction state, in turn, depends on the activity and properties of PVK:rGO memristors as well as the additional non-uniformities induced through the variations of density of carriers. The present optical methodology can be potentially served as a bench-top device for characterization purposes of similar devices while they are operating.
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