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arXiv 2404.19366cond-mat.mtrl-sciphysics.app-phphysics.ins-det
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利用原位透射电子显微镜实现(纳米)材料热电表征的探索

Toward thermoelectric characterization of (nano)materials by in situ transmission electron microscopy

Simon Hettler, Mohammad Furqan, Andres Sotelo, Raul Arenal

AI总结:

本文提出基于定制差分加热微芯片的原位TEM热电表征方法,验证热电压与Seebeck系数的对应关系,并给出可定量测量热导率、电导率及Seebeck系数的改进芯片设计。

摘要:

我们探索了利用原位透射电子显微镜(TEM)对材料进行热电表征的可能性。定制原位TEM微芯片上的差分加热元件能够在所研究材料两端产生温度梯度,同时对这些材料进行电学测量。在所有被研究器件中均感应出热电压,其符号与被测材料的Seebeck系数符号相对应。结果表明,原位热电TEM研究有助于深入理解热电效应的基本方面;通过在非晶Ge薄膜原位结晶过程中追踪热电压,对此进行了示范性证明。我们提出了一种改进的原位TEM微芯片设计,该设计应有助于对感应温度梯度、电导率和热导率以及Seebeck系数进行完整的定量测量。原位方法的优势在于,能够将热电性质与整个被研究器件的结构和化学成分直接关联起来,分辨率可达到原子尺度,包括晶界、掺杂剂或晶体缺陷,并能追踪其在加热过程中或施加电流期间的动态演化。

英文摘要:

We explore the possibility to perform an in-situ transmission electron microscopy (TEM) thermoelectric characterization of materials. A differential heating element on a custom in-situ TEM microchip allows to generate a temperature gradient across the studied materials, which are simultaneously measured electrically. A thermovoltage was induced in all studied devices, whose sign corresponds to the sign of the Seebeck coefficient of the tested materials. The results indicate that in-situ thermoelectric TEM studies can help to profoundly understand fundamental aspects of thermoelectricity, which is exemplary demonstrated by tracking the thermovoltage during in-situ crystallization of an amorphous Ge thin film. We propose an improved in-situ TEM microchip design, which should facilitate a full quantitative measurement of the induced temperature gradient, the electrical and thermal conductivities, as well as the Seebeck coefficient. The benefit of the in-situ approach is the possibility to directly correlate the thermoelectric properties with the structure and chemical composition of the entire studied device down to the atomic level, including grain boundaries, dopants or crystal defects, and to trace its dynamic evolution upon heating or during the application of electrical currents

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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