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arXiv 2404.13086cond-mat.mtrl-sci

高结晶有机半导体中的能带结构工程

Band Structure Engineering in Highly Crystalline Organic Semiconductors

Shu-Jen Wang, Sebastian Hutsch, Felix Talnack, Marielle Deconinck, Shiyu Huang, Zongbao Zhang, Hans Kleemann, Yana Vaynzof, Stefan C. B. Mannsfeld, Frank Ortmann, Karl Leo

AI总结:

本文研究高结晶有机半导体共混物,通过光谱和理论模拟证明电子离域对能带结构工程有显著贡献,为定制光电应用铺路。

摘要:

半导体共混用于控制能级(能带结构工程)是一种重要的技术,尤其在光电应用中。其基础物理是离域的布洛赫态,这些态对共混物的势垒景观进行平均。对于有机半导体,已表明两种截然不同的效应——介电常数和分子间的静电相互作用——可用于调节无序和弱结晶有机半导体共混物的能隙和电离能。迄今为止,尚不清楚具有大带宽的有机晶体中的电子离域是否能以类似于无机半导体的方式对共混物的能结构工程做出贡献。在此,我们研究了具有相似化学结构的高度有序有机薄膜共混物的生长,并通过光谱方法展示了能带结构工程的效果。我们通过全面的理论模拟对实验结果进行了合理化,表明离域是一个显著效应。我们的工作为工程化高度有序有机半导体薄膜的能带结构铺平了道路,这些薄膜可根据所需的光电器件应用进行定制。

英文摘要:

Blending of semiconductors for controlling the energy levels (band structure engineering) is an important technique, in particular, for optoelectronic applications. The underlying physics is the delocalized Bloch states, which average over the potential landscape of the blend. For organic semiconductors, it has been shown that two quite different effects, the dielectric constant and electrostatic interaction between molecules, can be used to tune the energy gap and ionization energy of disordered and weakly crystalline organic semiconductor blends. It is so far not known whether the electronic delocalization in organic crystals with large bandwidths can contribute to the energy structure engineering of the blend in a way similar to that in inorganic semiconductors. Here, we investigate the growth of highly ordered organic thin-film blends with a similar chemical structure and show the effect of band structure engineering by spectroscopic methods. We rationalize the experimental results with comprehensive theoretical simulations, showing that the delocalization is a significant effect. Our work paves the way for engineering the band structure of highly ordered organic semiconductor thin films that can be tailored for the desired optoelectronic device application.

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