隧道结使能的单片集成GaN微发光晶体管
Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor
AI总结：
本文提出并演示了一种将GaN/InGaN隧道结microLED与GaN n沟道FET单片集成的三端微发光晶体管，实现电压控制输出功率，具备优异栅控、电流和光发射控制，为高效快速开关显示与通信系统提供路径。
摘要：
GaN/InGaN微发光二极管（microLED）是下一代显示技术中极具前景的技术。开关控制晶体管及其集成是实现高性能、高效率显示器的关键组成部分。将microLED与GaN开关器件进行单片集成，提供了一种通过电容（电压）控制而非电流控制方案来控制microLED输出功率的机会。这种方法可以大幅降低驱动电路阵列的系统复杂性，同时保持器件的光电性能。在本工作中，我们展示了一种3端GaN微发光晶体管，它将基于GaN/InGaN蓝色隧道的microLED与GaN n沟道场效应晶体管（FET）相结合。该集成器件展现出优异的栅极控制、漏极电流控制和光学发射控制能力。这项工作为未来将GaN FET与microLED进行单片集成，以实现快速开关、高效率的microLED显示和通信系统提供了一条有前景的路径。
英文摘要：
GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs with GaN switching devices provides an opportunity to control microLED output power with capacitive (voltage) control rather than current controlled schemes. This approach can greatly reduce system complexity for the driver circuit arrays while maintaining device opto-electronic performance. In this work, we demonstrate a 3-terminal GaN micro-light emitting transistor that combines a GaN/InGaN blue tunneling-based microLED with a GaN n-channel FET. The integrated device exhibits excellent gate control, drain current control and optical emission control. This work provides a promising pathway for future monolithic integration of GaN FETs with microLED to enable fast switching high efficiency microLED display and communication systems.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
