通过放电等离子体织构技术合成c轴织构的CaKFe$_4$As$_4$超导块材
Synthesis of $c$-axis textured CaKFe$_4$As$_4$ superconducting bulk via spark plasma texturing technique
AI总结：
本研究利用放电等离子体织构技术成功制备了具有c轴织构的CaKFe$_4$As$_4$超导块材，在4.2 K、5 T下临界电流密度达26 kA cm$^{-2}$，证明了该方法在高场超导应用中的潜力。
摘要：
晶粒取向是决定超导块材性能的关键因素。本研究采用放电等离子体织构（SPT）技术制备了CaKFe$_4$As$_4$超导块材。X射线衍射和电子背散射衍射结果表明，SPT块材中CaKFe$_4$As$_4$晶粒的c轴实现了取向排列，证明SPT技术能够有效获得c轴织构。此外，化学成分分析显示，影响晶界特性进而决定晶间临界电流密度（$J_c$）的氧化物杂质在SPT块材中呈随机分布。磁化测量结果表明，SPT块材具有较高的$J_c$值，在4.2 K、自场和5 T磁场下分别达到127 kA cm$^{-2}$和26 kA cm$^{-2}$。这些结果表明，SPT技术是一种有望用于高场应用的高性能超导块材制备方法。
英文摘要：
Grain alignment is a key factor that determines the performance of a superconducting bulk. In this study, the spark plasma texturing (SPT) technique was used to fabricate a CaKFe$_4$As$_4$ superconducting bulk. X-ray diffraction and electron backscatter diffraction revealed that the $c$-axes of the CaKFe$_4$As$_4$ grains in the SPT bulk are aligned, demonstrating that the SPT technique is effective in achieving $c$-axis texture. In addition, chemical composition analysis showed that oxide impurities, which affect the grain boundary characteristics that determine the inter-grain critical current density ($J_c$), are randomly distributed in the SPT bulk. Magnetization measurements showed high $J_c$ values of the SPT bulk, reaching 127 kA cm$^{-2}$ and 26 kA cm$^{-2}$ at 4.2 K under a self-field and magnetic field of 5 T, respectively. These results suggest that the SPT technique is a promising approach for obtaining a high-performance superconducting bulk material for high-field applications.
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