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arXiv 2403.18655physics.opticscond-mat.mes-hall

单晶金微片上薄层WSe2中强耦合激子-等离激元极化激元的完整近场定量表征

Full quantitative near-field characterization of strongly coupled exciton-plasmon polaritons in thin-layered WSe2 on a monocrystalline gold platelet

Laura N. Casses, Binbin Zhou, Qiaoling Lin, Annie Tan, Diane-Pernille Bendixen-Fernex de Mongex, Korbinian J. Kaltenecker, Sanshui Xiao, Martijn Wubs, Nicolas Stenger

AI总结:

利用近场光学显微镜定量表征了单晶金微片上薄层WSe2中强耦合激子-等离激元极化激元的色散,提取了Rabi分裂和极化激元损耗,首次测量了可见光波段的传播长度,并用传输矩阵方法验证了近场测量对复值波矢的预测能力。

摘要:

激子-等离激元极化激元(EPPs)因在探索基础现象及纳米光子学应用方面具有吸引力而备受关注。以往对EPPs的研究主要依赖于远场表征。在此,利用近场光学显微镜,我们定量地表征了沉积在单晶金微片上的13纳米厚二硒化钨(WSe$_2$)中存在的EPPs的色散。我们从实验数据中提取出81 meV的Rabi分裂,以及55 meV的实验有效极化激元损耗,证明我们的系统处于强耦合区域。此外,我们首次在可见光波段测量了这些EPPs在色散关系中每个激发能下的传播长度。为了证明我们获取EPPs完整复值波矢的近场方法的定量特性,我们利用近场测量结果,通过传输矩阵方法预测了跨越激子共振的远场反射率。这些预测与我们的实验远场测量结果高度一致。我们的发现为在纳米尺度上全面开展近场研究光操控器件打开了大门。

英文摘要:

Exciton-plasmon polaritons (EPPs) are attractive both for the exploration of fundamental phenomena and applications in nanophotonics. Previous studies of EPPs mainly relied on far-field characterization. Here, using near-field optical microscopy, we quantitatively characterize the dispersion of EPPs existing in 13-nm-thick tungsten diselenide (WSe$_2$) deposited on a monocrystalline gold platelet. We extract from our experimental data a Rabi splitting of 81 meV, and an experimental effective polariton loss of 55 meV, demonstrating that our system is in the strong-coupling regime. Furthermore, we measure for the first time at visible wavelengths the propagation length of these EPPs for each excitation energy of the dispersion relation. To demonstrate the quantitative nature of our near-field method to obtain the full complex-valued wavevector of EPPs, we use our near-field measurements to predict, via the transfer matrix method, the far-field reflectivities across the exciton resonance. These predictions are in excellent agreement with our experimental far-field measurements. Our findings open the door towards the full near-field study of light-manipulating devices at the nanoscale.

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