石墨烯缺陷的微拉曼光谱研究及紫外曝光引起的氧化过程追踪
Micro-Raman spectroscopy of graphene defects and tracing the oxidation process caused by UV exposure
AI总结：
本研究利用微拉曼光谱识别石墨烯层数与缺陷，发现I2D/IG与激光功率密度线性相关，并通过紫外曝光下D峰出现和2D峰消失追踪氧化过程，证实了方法的非破坏性及边缘折叠可能性。
摘要：
拉曼光谱是分析包括碳基材料在内的各种样品的广泛使用的方法之一。本研究旨在利用微拉曼光谱识别石墨烯的层数和缺陷。更具体地说，研究考察了在紫外曝光下追踪石墨烯的氧化过程。对拉曼激发激光功率密度效应的研究表明，I2D/IG比值与激发激光的功率密度之间存在线性依赖关系。此外，由于功率密度的增加而导致的D峰缺失，为微拉曼光谱的非破坏性提供了证据。鉴于I2D/IG的值（这是确定石墨烯层数的参数之一，在边缘处已达到1.39），研究结果表明存在单层石墨烯边缘折叠的可能性。在氧化过程中，D峰的强度和位置随曝光时间的增加而增加。石墨烯拉曼光谱的变化，包括2D峰的消失和D峰的出现，追踪并确认了样品的氧化过程。
英文摘要：
Raman spectroscopy is one of the widely used methods in the analysis of various samples including carbon-based materials. This study aimed to identify the number of layers and defects in graphene using micro-Raman spectroscopy. More specifically, the study examined tracing the oxidation process of graphene under UV exposure. Investigation of the effect of the power density of the Raman excitation laser reveals a linear dependence between the ratio of I2D/IG and the power density of the excitation laser. Also, the absence of peak D due to the increase in power density provides evidence for the non-destructive nature of micro-Raman spectroscopy. Given the value of I2D/IG, one of the parameters for determining the number of layers in graphene which has reached 1.39 at the edge, the findings indicate the possibility of an edge fold of single-layer graphene. During the oxidation process, the intensity and position of the D peak increase as a function of exposure time. Alterations in the graphene Raman spectrum, comprising the disappearance of the 2D peak and the appearance of the D peak, trace and confirm the oxidation process of the sample.
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