硫醇-胺共溶剂辅助旋涂直接合成ZnTe薄膜用于低成本光电应用
Thiol-amine co-solvents aided direct synthesis of ZnTe thin films by spin coating for low cost optoelectronic applications
AI总结：
本研究提出一种利用硫醇-胺共溶剂直接溶解ZnTe并通过旋涂制备薄膜的新方法，通过控制退火温度调节其光学带隙，为低成本光电应用提供可行方案。
摘要：
碲化锌（ZnTe）薄膜具有特殊的半导体特性，使其在广泛的光电应用中极具前景。本工作中，采用一种新颖的方法，通过旋涂技术合成ZnTe薄膜，该方法使用独特的溶液工艺，将ZnTe直接溶解于硫醇-胺共溶剂中。薄膜在玻璃基底上合成，并在250-350 °C下空气退火。X射线衍射（XRD）研究揭示了ZnTe的多晶相。使用扫描电子显微镜（SEM）观察了表面光滑度随退火温度的变化。此外，通过能量色散光谱（EDS）研究确定了ZnTe薄膜的元素组成。FTIR光谱揭示了ZnTe已成功合成，这通过750-1000 cm-1光谱中的特征峰得到证实。使用紫外-可见光谱研究了ZnTe薄膜的光学性质。薄膜的透射率随退火温度升高而增加。此外，在250、300和350 °C退火温度下，薄膜的光学带隙分别为2.92、2.84和2.5 eV。这些结果表明，控制退火环境是调整ZnTe薄膜性能以满足特定应用要求的一种有价值的策略。这些结果揭示，旋涂ZnTe薄膜在太阳能电池和光电探测器等光电器件的各种应用中具有吸引力。
英文摘要：
Zinc telluride (ZnTe) thin films have special semiconducting characteristics that make them very promising for a broad range of optoelectronic applications. In this work, a novel approach for synthesizing ZnTe thin films by spin coating technique is followed using a unique solution process with ZnTe directly dissolving in thiol-amine co-solvents. Thin films are synthesized on glass substrates and air annealed at 250-350 °C. The polycrystalline phase of ZnTe is revealed through the X-ray diffraction (XRD) study. The scanning electron microscopy (SEM) is used to observe the evolution of surface smoothness with annealing temperature. Moreover, elemental compositions of ZnTe thin film have been determined by energy dispersive spectroscopy (EDS) study. FTIR spectroscopy reveals that ZnTe has been successfully synthesized as confirmed by the characteristic peaks in the spectrum of 750-1000 cm-1. Optical properties of the ZnTe thin films have been investigated using UV-vis spectroscopy. The transmittance of the films increases with annealing temperature. Furthermore, the optical bandgaps of the films of 2.92, 2.84, and 2.5 eV have been found at 250, 300, and 350 °C annealing temperatures, respectively. These results suggest that controlling the annealing environment serves as a valuable strategy for tailoring the ZnTe film properties to meet specific application requirements. These results reveal that spin coated ZnTe thin films are attractive ones for various applications in optoelectronic devices such as solar cells and photodetectors.
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