硅传感器湿度诱导击穿的TCAD仿真
TCAD Simulations of Humidity-Induced Breakdown of Silicon Sensors
AI总结：
本研究使用Synopsys TCAD仿真结合光子发射成像和Top-Transient Current Technique测量，探究了环境湿度对硅传感器击穿电压的影响，揭示了p-bulk硅传感器外围电场和载流子密度随相对湿度趋向击穿的演化过程。
摘要：
硅传感器的击穿电压已知会受环境湿度影响。为了理解传感器的湿度敏感性，使用Synopsys TCAD仿真了不同有效相对湿度下的n-in-p传感器。利用显微镜对热电子的光子发射进行成像，以定位传感器边缘区域的击穿。使用Top-Transient Current Technique测量了传感器击穿区域表面附近的电荷传输。结合测量和仿真，研究了p-bulk硅传感器外围中电场随相对湿度的演化以及载流子密度趋向击穿的过程。
英文摘要：
The breakdown voltage of silicon sensors is known to be affected by the ambient humidity. To understand the sensor's humidity sensitivity, Synopsys TCAD was used to simulate n-in-p sensors for different effective relative humidities. Photon emission of hot electrons was imaged with a microscope to locate breakdown in the edge-region of the sensor. The Top-Transient Current Technique was used to measure charge transport near the surface in the breakdown region of the sensor. Using the measurements and simulations, the evolution of the electric field with relative humidity and the carrier densities towards breakdown in the periphery of p-bulk silicon sensors are investigated.
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