不同几何结构的纳米级SOI无结FinFET的自热效应
Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries
AI总结：
该研究探究不同横截面形状、沟道长度及埋氧层厚度的纳米级SOI无结FinFET的自热效应，发现沟道中部温度低于源漏侧边，且温度受沟道截面形状影响。
摘要：
本研究针对横截面为矩形、梯形和三角形的纳米级绝缘体上硅无结（SOI JL）FinFET晶体管，开展了自热效应（SHE）研究。分析了晶格温度与沟道长度以及埋氧层厚度的关联。结果表明，对于所研究的晶体管结构，沟道中部的晶格温度低于靠近源极和漏极的侧边位置。此外还发现，在相同条件下，晶格温度也与沟道横截面的形状有关。
英文摘要：
In this work we study the self-heating (1) effect (SHE) in nanoscale Silicon on Insulator Junctionless (SOI JL) FinFET transistor with fi cross section in rectangular, trapeze and triangle form. The lattice temperature dependence on the channel length as well as on buried oxide thickness is considered. It is shown that for considered transistor structure the lattice temperature in the middle of the channel is lower than at lateral sides, near source and drain. Also, we have found at the same conditions the lattice temperature depends on shape of channel cross section too
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