高质量NbMnP揭示反铁磁结构引起的本征反常霍尔效应
Intrinsic anomalous Hall effect arising from antiferromagnetic structure revealed by high-quality NbMnP
AI总结：
本研究通过高质量NbMnP单晶证明，其巨大的反常霍尔电导和微小净磁化是材料固有的且与无序无关，揭示了反铁磁结构引起的本征反常霍尔效应。
摘要：
反铁磁（AF）材料中的巨大反常霍尔效应（AHE）源于与铁磁（FM）态等效的对称性破缺。因此，这表明观测到的AHE是由能带结构效应的本征机制引起的，进而引发无耗散横向电导。确认对杂质不敏感的反常霍尔电导（AHC）对于得出这一解释至关重要；然而，AF材料中的实验研究受限于高质量体系的缺乏。本研究表明，表现出巨大AHE的AF材料NbMnP提供了高质量单晶。我们的发现清楚地揭示，巨大的AHC和约$10^{-3} μ_{\mathrm{B}}$/Mn的微小净磁化是该材料固有的，与无序无关。NbMnP是一种新型AF材料，在杂质散射较少的区域内产生FM响应。
英文摘要：
The large anomalous Hall effect (AHE) in antiferromagnetic (AF) materials arises from symmetry breaking equivalent to a ferromagnetic (FM) state. Consequently, this suggests that the observed AHE is induced by the intrinsic mechanism of the band structure effect, which in turn induces dissipationless transverse conductivity. Confirmation of impurity-insensitive anomalous Hall conductivity (AHC) is crucial to conclude this interpretation; however, experimental investigations in AF materials are limited by the lack of high quality systems. In this study, we show that the AF material NbMnP, which exhibits a large AHE, offers a high quality single crystal. Our findings clearly revealed that the large AHC and the tiny net magnetization of $\sim10^{-3} μ_{\mathrm{B}}$/Mn are inherent in this material, irrespective of disorder. NbMnP is a novel AF material that generates FM responses in the regime where there is less impurity scattering.
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