使用基于物理的紧凑模型对局部有源 Mott 忆阻器进行非线性动力学与稳定性分析
Nonlinear dynamics and stability analysis of locally-active Mott memristors using a physics-based compact model
AI总结：
本文基于物理紧凑模型与 Chua 局部活性理论分析二氧化钒 Mott 忆阻器，并用全局非线性方法揭示振荡器分岔机制，实验与 SPICE 仿真吻合。
摘要：
局部有源忆阻器是一类新兴的非线性动态电路元件，有望用于可扩展且仿生的神经形态电路。我们从基于物理的紧凑模型出发，进行了小信号线性化分析，并将 Chua 局部活性理论应用于一种基于绝缘体—金属相变的一维局部有源二氧化钒 Mott 忆阻器。该方法能够把 Mott 忆阻器的动力学行为与其物理器件参数联系起来，并在频率和电流工作参数空间中完整映射局部无源域和混沌边缘域，从而可指导神经形态电路应用中的材料与器件开发。我们还考察了局部分析在二阶张弛振荡器电路中的适用性；该电路由一个电压偏置的二氧化钒忆阻器与并联电抗电容元件及串联电阻耦合构成。结果表明，包括零线和相图在内的全局非线性技术可揭示非双曲不动点附近的不稳定性与持续振荡，例如从不稳定螺旋到稳定极限环的超临界类 Hopf 分岔，并且三个电路参数中的每一个都可作为分岔参数。极限环的突增类似于呈现张弛振荡的系统中的 Canard 爆炸现象。最后，我们表明，二氧化钒纳米器件张弛振荡器中的实验极限环振荡与基于该紧凑模型建立的 SPICE 仿真高度吻合。
英文摘要：
Locally-active memristors are a class of emerging nonlinear dynamic circuit elements that hold promise for scalable yet biomimetic neuromorphic circuits. Starting from a physics-based compact model, we performed small-signal linearization analyses and applied Chua's local activity theory to a one-dimensional locally-active vanadium dioxide Mott memristor based on an insulator-to-metal phase transition. This approach allows a connection between the dynamical behaviors of a Mott memristor and its physical device parameters as well as a complete mapping of the locally passive and edge of chaos domains in the frequency and current operating parameter space, which could guide materials and device development for neuromorphic circuit applications. We also examined the applicability of local analyses on a second-order relaxation oscillator circuit that consists of a voltage-biased vanadium dioxide memristor coupled to a parallel reactive capacitor element and a series resistor. We show that global nonlinear techniques, including nullclines and phase portraits, provide insights on instabilities and persistent oscillations near non-hyperbolic fixed points, such as a supercritical Hopf-like bifurcation from an unstable spiral to a stable limit cycle, with each of the three circuit parameters acting as a bifurcation parameter. The abruptive growth in the limit cycle resembles the Canard explosion phenomenon in systems exhibiting relaxation oscillations. Finally, we show that experimental limit cycle oscillations in a vanadium dioxide nano-device relaxation oscillator match well with SPICE simulations built upon the compact model.
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