arXiv 2402.162642024-02-26cond-mat.mes-hall

NbSe2纳米桥中的本征超流二极管效应

Intrinsic supercurrent diode effect in NbSe2 nanobridge

Yiwen Zhang, Jiliang Cai, Peng Dong, Jiadian He, Yifan Ding, Jinghui Wang, Xiang Zhou, Kecheng Cao, Yueshen Wu, Jun Li

AI总结：

本文在聚焦氦离子束制备的约15 nm NbSe2纳米桥中直接观测到本征超流二极管效应，峰值非互易超流约380 μA且可由偏置极性切换，为超导器件与电路发展提供新机制。

摘要：

超导二极管效应的重要性在于其作为下一代超导电路技术基础元件的潜在应用。传统半导体二极管在低温下的严苛工作条件因其极高的电阻率而面临挑战。针对这一局限，目前已出现多种实现超导二极管效应的方法，主要通过在二维超导体中通过异质结构制备破坏反演对称性。在本研究中，我们直接观测到了利用聚焦氦离子束制备的长度约为15 nm的NbSe2纳米桥中的超流二极管效应。在Bzmax = ±0.2 mT条件下，每个偏置极性均观察到非互易超流，峰值约为380 μA。值得注意的是，非互易超流可以通过改变偏置极性进行切换。这一超导二极管效应的发现通过在超导薄片上纳米加工引入了一种新途径和新机制，为超导器件和潜在电路的发展提供了新的视角。

英文摘要：

The significance of the superconducting diode effect lies in its potential application as a fundamental component in the development of next-generation superconducting circuit technology. The stringent operating conditions at low temperatures have posed challenges for the conventional semiconductor diode, primarily due to its exceptionally high resistivity. In response to this limitation, various approaches have emerged to achieve the superconducting diode effect, primarily involving the disruption of inversion symmetry in a two-dimensional superconductor through heterostructure fabrication. In this study, we present a direct observation of the supercurrent diode effect in a NbSe2 nanobridge with a length of approximately 15 nm, created using focused helium ion beam fabrication. Nonreciprocal supercurrents were identified, reaching a peak value of approximately 380 $μ$A for each bias polarity at $B_{z}^{max} =\pm 0.2$ mT. Notably, the nonreciprocal supercurrent can be toggled by altering the bias polarity. This discovery of the superconducting diode effect introduces a novel avenue and mechanism through nanofabrication on a superconducting flake, offering fresh perspectives for the development of superconducting devices and potential circuits.

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