多能隙拓扑相中的量子化积分位移效应
Quantized Integrated Shift Effect in Multigap Topological Phases
AI总结：
研究表明三维多能隙拓扑绝缘体可因体不变量产生量子化积分位移光电导，并以积分挠率张量与非 Abel Berry 联络解释其拓扑起源。
摘要：
我们证明，某些三维多能隙拓扑绝缘体可承载量子化的积分位移光电导，这源于在附加对称性所施加的实性条件下定义的体不变量。我们用积分挠率张量和构成 Chern-Simons 形式的非 Abel Berry 联络重新表述该量子化。在物理上，我们认识到这种拓扑量子化完全来自对光学响应有贡献的虚跃迁。我们的发现提供了另一种由非平凡能带拓扑导致的量子化电磁直流响应，超越了 Chern 绝缘体的量子反常霍尔效应和 Weyl 半金属中发现的量子化圆偏振光生伏打效应。
英文摘要：
We show that certain three-dimensional multigap topological insulators can host quantized integrated shift photoconductivities due to bulk invariants that are defined under reality conditions imposed by additional symmetries. We recast the quantization in terms of the integrated torsion tensor and the non-Abelian Berry connection constituting Chern-Simons forms. Physically, we recognize that the topological quantization emerges purely from virtual transitions contributing to the optical response. Our findings provide another quantized electromagnetic dc response due to the nontrivial band topology, beyond the quantum anomalous Hall effect of Chern insulators and quantized circular photogalvanic effect found in Weyl semimetals.
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