具有倾斜 Dirac 锥的二维材料中的双极电子波导
Bipolar electron waveguides in two-dimensional materials with tilted Dirac cones
AI总结：
本文证明含倾斜项的(2+1)维无质量Dirac方程可简化为双合流Heun方程，并以此研究8-Pmmn硼烯中由Morse势描述的双极电子波导，发现可通过顶栅电压调节赝能隙，具有光谷电子学和太赫兹应用潜力。
摘要：
我们证明，包含倾斜项的 (2+1) 维无质量 Dirac 方程，对于包括著名的 Morse 势在内的广泛标量限制势，可以简化为双合流 Heun 方程。应用这些解，我们研究了 8-Pmmn 硼烯中的双极电子波导，该波导由阱和势垒形成，两者均由 Morse 势描述。我们证明，具有倾斜 Dirac 锥的二维材料在势垒和阱中局域电子的能力可以被利用来在其电子能谱中产生赝能隙。这些赝能隙可以通过改变施加的顶栅电压来调节。讨论了潜在的光谷电子学和太赫兹应用。
英文摘要：
We show that the (2+1)-dimensional massless Dirac equation, which includes a tilt term, can be reduced to the biconfluent Heun equation for a broad range of scalar confining potentials, including the well-known Morse potential. Applying these solutions, we investigate a bipolar electron waveguide in 8-$Pmmn$ borophene, formed by a well and barrier, both described by the Morse potential. We demonstrate that the ability of two-dimensional materials with tilted Dirac cones to localize electrons in both a barrier and a well can be harnessed to create pseudogaps in their electronic spectrum. These pseudogaps can be tuned through varying the applied top-gate voltage. Potential opto-valleytronic and terahertz applications are discussed.
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