150nm GaAs工艺下W波段高PAE A类与AB类功率放大器设计
Design of a W-band High-PAE Class A&AB Power Amplifier in 150nm GaAs Technology
AI总结：
本文针对纳米级亚太赫兹功率放大器寄生效应严重且功率附加效率低的问题，提出一种基于150nm GaAs工艺的W波段3级2路A类与AB类结合的PA设计，通过Wilkinson功率合成器和传输线匹配网络等技术，实现了20.1dB增益和33%的PAE，为6G广泛采用铺平道路。
摘要：
纳米级亚太赫兹功率放大器（PA）存在严重的寄生效应，导致最大频率受限并降低器件收发前端的功率性能。集成电路研究人员提出了按比例缩小技术下的不同PA设计架构组合来克服这些限制。尽管这些设计满足最低要求，但PA的功率附加效率（PAE）仍然很低。本文提出了一种W波段单端共源（CS）和共源共栅集成的3级2路PA设计。该设计集成了不同的关键设计方法以减轻寄生效应；例如，结合AB类和A类级用于增益提升和效率增强，采用Wilkinson功率合成器以获得更高的输出功率、线性度和带宽，以及使用基于传输线（TL）的宽带匹配网络以实现更好的级间匹配和紧凑尺寸。所提出的PA设计使用UMS 150-nm GaAs pHEMT通过先进设计系统（ADS）仿真器进行验证。结果表明，所提出的PA在90 GHz亚太赫兹频段实现了20.1 dB的增益、17.2 dBm的输出功率、33%的PAE和21 GHz的带宽。包括焊盘在内，PA版图仅占用5.66 X 2.51 mm2的芯片面积。我们提出的PA设计将推动亚太赫兹集成电路的研究，并促进6G在不久的将来广泛采用。
英文摘要：
Nanometer scale power amplifiers (PA) at sub-THz suffer from severe parasitic effects that lead to experience limited maximum frequency and reduced power performance at the device transceiver front end. The integrated circuits researchers proposed different PA design architecture combinations at scaled down technologies to overcome these limitations. Although the designs meet the minimum requirements, the power added efficiency (PAE) of PA is still quite low. In this paper, a W-band single-ended common-source (CS) and cascode integrated 3-stage 2-way PA design is proposed. The design integrated different key design methodologies to mitigate the parasitic; such as combined Class AB and Class A stages for gain-boosting and efficiency enhancement, Wilkinson power combiner for higher output power, linearity, and bandwidth, and transmission line (TL)-based wide band matching network for better inter-stage matching and compact size. The proposed PA design is validated using UMS 150-nm GaAs pHEMT using advanced design system (ADS) simulator. The results show that the proposed PA achieved a gain of 20.1 dB, an output power of 17.2 dBm, a PAE of 33 % and a 21 GHz bandwidth at 90 GHz Sub-THz band. The PA layout consumes only 5.66 X 2.51 mm2 die space including pads. Our proposed PA design will boost the research on sub-THz integrated circuits research and will smooth the wide spread adoption of 6G in near future.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
