n-TPA-IFA/p-Si异质结结构的光敏与光电探测器特性研究
Investigation of photosensitive and photodetector characteristics of n-TPA-IFA/p-Si heterojunction structure
AI总结：
本研究制备了n-TPA-IFA/p-Si异质结二极管，通过实验表征其电学和光电特性，发现其具有高整流比和随光照增强的光响应，证实其可作为光电探测器应用。
摘要：
通过旋涂法合成了n-TPA-IFA有机材料并将其沉积在p-Si上，制备了n-TPA-IFA/p-Si异质结二极管。利用Gaussian 09 W软件，通过DFT/B3LYP/6-311G(d,p)方法确定了TPA-IFA有机材料的介电常数为3.91，能带隙为3.37 eV；并通过变温霍尔效应测量确定TPA-IFA有机半导体材料在室温下为n型载流子。通过在暗态和不同光照强度下进行正反向偏压I-V测量，我们考察了n-TPA-IFA/p-Si异质结二极管的关键电学特性，包括势垒高度（Qb）和理想因子（n）。测得整流比（RR）约为10^4。反向电流随光照增强而增大的现象表明，所制备的异质结二极管可用作光电二极管、探测器或传感器。在不同光照强度下探究了n-TPA-IFA/p-Si异质结构的光电探测器特性，发现异质结的光响应度（R）、光敏性（PS）、比探测率（D）和线性动态范围（LDR）随反向电压和光照强度变化。研究发现，随着光照强度增加，作为图像传感器关键特性的线性动态范围（LDR）也随之增大（在20和100 mW/cm²下分别为10.15 dB和18.84 dB）。最终，实验结果证实基于TPA-IFA的异质结二极管可用于光电探测器应用。
英文摘要：
n-TPA-IFA organic material was synthesized and deposited on p-Si by spin coating method to produce n-TPA-IFA/p-Si heterojunction diode. We determined that the dielectric constant and energy band gap of TPA-IFA organic material were 3.91 and 3.37 eV by DFT/B3LYP/6-311G(d,p) method using on Gaussian 09 W, respectively and the carrier type of TPA-IFA organic semiconductor material was also n-type at room temperature from temperature-dependent hall effect measurements. Using forward and reverse bias I-V measurements in the dark and under various light intensities, we examined the key electrical characteristics of the n-TPA-IFA/p-Si heterojunction diodeincluding, Qb and n. It was determined that the rectification ratio (RR) was approximately 104. The reverse current's observed increasing behavior with increasing light indicates that the produced heterojunction diode can be utilized as a photo-diode, detector, or sensor. The photodetector properties of n-TPA-IFA/p-Si heterostructure were explored at different light intensities, and the photoresponsivity (R), photosensitivity (PS), specific detectivity (D), and linear dynamic range (LDR) of the heterojunction found to be changed with reverse voltage and light intensity. It was found that as light intensity increased, the linear dynamic range (LDR), a crucial characteristic for image sensors, increased as well (10.15 dB and 18.84 dB for 20 and 100 mW/cm2). Ultimately, the findings confirmed that the TPA-IFA-based heterojunction diode could be obtained for the photodetector application.
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