通过静电工程设计窄隙半导体薄膜中的拓扑与分数化
Designing topology and fractionalization in narrow gap semiconductor films via electrostatic engineering
AI总结：
该研究提出仅用外部静电超晶格势在窄隙半导体薄膜中构造拓扑平微带，证明其可在零磁场下承载整数与分数量子反常霍尔态及复合费米液体相。
摘要：
我们表明，仅利用外部静电超晶格势，就可以在一类窄隙半导体薄膜中设计出拓扑平微带。我们证明，对于现实的材料参数，这些能带能够在零磁场下承载关联拓扑相，例如整数量子反常霍尔态、分数量子反常霍尔态以及复合费米液体相。我们的结果为在广泛材料中实现分数化拓扑态提供了一条途径。
英文摘要：
We show that topological flat minibands can be engineered in a class of narrow gap semiconductor films using only an external electrostatic superlattice potential. We demonstrate that, for realistic material parameters, these bands are capable of hosting correlated topological phases such as integer and fractional quantum anomalous Hall states and composite Fermi liquid phases at zero magnetic field. Our results provide a path towards the realization of fractionalized topological states in a broad range of materials.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
