悬浮WSSe单层膜的压痕高应变工程及尖端增强光致发光测量
High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip-enhanced Photoluminescence
AI总结：
本研究通过AFM压痕和尖端增强光致发光技术，对悬浮WSSe单层膜施加高达10%的应变，观测到每单位应变64 meV的光致发光偏移，并测得273 GPa的高杨氏模量，展示了二维三元材料在应变电子学中的潜力。
摘要：
应变电子学涉及通过宏观和纳米尺度的应变工程来操控和调节二维材料的电子特性。在本研究中，我们利用原子力显微镜（AFM）耦合光学系统进行压痕测量和尖端增强光致发光（TEPL），从而提取悬浮的WSSe三元单层膜在不同形变水平（最高达10%应变）下的局部光学响应。光致发光信号建模时考虑了WSSe能带结构的形变、应力分布和应变依赖性。我们观察到额外的TEPL信号在应变下表现出显著变化，每百分之一伸长率对应64 meV的偏移。该峰与尖端正下方高度应变的二维材料相关。我们在更全面的模型中讨论了信号的放大及其与激子漏斗效应的关系。我们还将俄歇复合引起的扩散与辐射激子衰减进行比较。我们利用TEPL来检查和理解承受极端机械应变的二维半导体材料的局部物理特性。化学气相沉积制备的二维三元材料具有高抗应变能力，可与基准MoS2相媲美，且具有273 GPa的高杨氏模量。
英文摘要：
Straintronics involves the manipulation and regulation of the electronic characteristics of 2D materials through the use of macro- and nano-scale strain engineering. In this study, we utilized an atomic force microscope (AFM) coupled with an optical system to perform indentation measurements and tip-enhanced photoluminescence (TEPL), allowing us to extract the local optical response of a suspended monolayer membrane of ternary WSSe at various levels of deformation, up to strains of 10%. The photoluminescence signal is modelled considering the deformation, stress distribution and strain dependence of the WSSe band structure. We observe an additional TEPL signal that exhibits significant variation under strain, with 64 meV per percent of elongation. This peak is linked to the highly strained 2D material lying right underneath the tip. We discuss the amplification of the signal and its relation to the excitonic funnelling effect in a more comprehensive model. We will also compare the diffusion caused by Auger recombination against the radiative excitonic decay. We use TEPL to examine and comprehend the local physics of 2D semi-conducting materials subjected to extreme mechanical strain. Chemical vapour deposition-fabricated 2D ternaries possess high strain resistance, comparable to the benchmark MoS2, and a high Young's modulus of 273 GPa.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
