通过h-BN钝化及剥离转移至金刚石衬底降低GaN HEMT自热效应：一项模拟研究
Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: a simulation study
AI总结：
该模拟研究提出将h-BN同时用作钝化层和剥离层，将GaN HEMT转移至金刚石衬底，可大幅降低自热效应，显著提升器件热性能、电学特性及可靠性。
摘要：
本文通过数值模拟研究了将六方氮化硼（h-BN）同时用作钝化层和剥离层，将GaN HEMT转移至金刚石衬底后，器件自热效应（SHEs）的降低效果。与SiO₂/GaN/蓝宝石HEMT相比，所得器件表现出更优的热性能：晶格温度从SiO₂/GaN/蓝宝石结构的507 K降至h-BN/GaN/金刚石HEMT的372 K。温度下降使漏极电流和跨导提升至900 mA/mm和250 mS/mm，对应提升幅度达47%。此外，总热阻Rth降低了5倍，从GaN/蓝宝石HEMT的27 K·mm/W降至GaN/金刚石HEMT的5.5 K·mm/W。本研究表明，将h-BN集成到GaN HEMT中，同时作为顶部散热层和转移至金刚石衬底的剥离层，是降低自热效应、提升器件寿命与可靠性的极具潜力的方案。
英文摘要：
In this article, we investigate through numerical simulation the reduction of self-heating effects (SHEs) in GaN HEMT via the integration of hexagonal boron nitride (h-BN) as a passivation layer and as a release layer to transfer GaN HEMT to diamond substrate. The obtained devices exhibit improved thermal performance compared to SiO2/GaN/sapphire HEMT. The lattice temperature was reduced from 507 K in SiO2/GaN/sapphire to 372 K in h-BN/GaN/diamond HEMT. The temperature decrease enhances the drain current and transconductance to 900 mA/mm and 250 mS/mm, corresponding to a 47 % improvement. In addition, the total thermal resistance Rth is reduced by a factor of 5 from 27 K.mm/W in GaN/sapphire HEMT to 5.5 K.mm/W in GaN/diamond HEMT. This study indicates that h-BN integration in GaN HEMT as a top heat spreader and a release layer for transfer to diamond substrate can be a promising solution to reduce self-heating effects and extend the device lifetime and reliability.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
