利用间接激子模拟临界阴离子化学
Simulating critical anion chemistry with indirect excitons
AI总结：
本文通过半空间几何约束下双电子与表面重空穴的库仑模型，发现间接激子束缚的临界电荷为Z=1，高于无约束系统的0.911，表明层间电子-空穴系统可用于模拟临界核电荷附近的电子行为。
摘要：
我们通过考虑两个相同电子在半空间中运动的问题，研究几何约束对带多余电荷的间接激子复合物形成的影响。这两个电子受到相互库仑排斥作用，并受到位于不可穿透平面上的电荷为$Z$的重空穴的库仑吸引。我们发现$Z=1$是束缚所需的临界电荷，而在无约束系统中临界电荷为$Z_c\approx0.911$。这表明层间电子-空穴系统可以作为一个灵活且实验上可实现的平台，用于研究接近束缚所需临界核电荷时的电子行为。
英文摘要：
We study the effect of geometric constraints on the formation of indirect excitonic complexes with excess charge by considering the problem of two identical electrons moving in half-space subject to mutual Coulomb repulsion and the Coulomb attraction to a heavy hole of charge $Z$ residing on a flat impenetrable surface. We find that $Z=1$ is the critical charge necessary for binding, as compared to $Z_c\approx0.911$ in the unconstrained system. This suggests that interlayer electron--hole systems may serve as a flexible and experimentally accessible platform to study electronic behavior close to the critical nuclear charge necessary for binding.
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