DISO：一个用于对晶体材料中的位错进行建模的领域本体
DISO: A Domain Ontology for Modeling Dislocations in Crystalline Materials
AI总结：
本文提出位错本体（DISO），通过自上而下方法定义晶体材料线状缺陷概念与关系，遵循W3C标准发布，并通过用例与双向评估验证其在位错动力学建模中的有效性与丰富度。
摘要：
晶体材料（如金属和半导体）几乎总是包含一种称为位错的特殊缺陷类型。这种缺陷决定性地决定了许多重要的材料特性，例如强度、断裂韧性或延展性。在过去的几年中，人们通过实验表征技术和模拟，投入了大量精力来理解不同长度尺度下的位错行为。本文介绍了位错本体（DISO），它定义了与晶体材料中线状缺陷相关的概念和关系。我们使用自上而下的方法开发了DISO，在该方法中，我们首先定义位错领域中最一般的概念，随后对其进行专门化。DISO通过一个持久URL发布，遵循W3C发布链接数据的最佳实践。本文展示了DISO的两个潜在用例，以说明其在位错动力学领域中的有用性。对本体的评估在两个方向上进行，评估了本体在建模真实世界领域方面的成功程度以及本体的丰富度。
英文摘要：
Crystalline materials, such as metals and semiconductors, nearly always contain a special defect type called dislocation. This defect decisively determines many important material properties, e.g., strength, fracture toughness, or ductility. Over the past years, significant effort has been put into understanding dislocation behavior across different length scales via experimental characterization techniques and simulations. This paper introduces the dislocation ontology (DISO), which defines the concepts and relationships related to linear defects in crystalline materials. We developed DISO using a top-down approach in which we start defining the most general concepts in the dislocation domain and subsequent specialization of them. DISO is published through a persistent URL following W3C best practices for publishing Linked Data. Two potential use cases for DISO are presented to illustrate its usefulness in the dislocation dynamics domain. The evaluation of the ontology is performed in two directions, evaluating the success of the ontology in modeling a real-world domain and the richness of the ontology.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
