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arXiv 2312.05850cond-mat.mes-hall
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范德华半金属中的埃廷斯豪森效应成像与低温热电冷却

Imaging the Ettingshausen effect and cryogenic thermoelectric cooling in a van der Waals semimetal

T. Völkl, A. Aharon-Steinberg, T. Holder, E. Alpern, N. Banu, A. K. Pariari, Y. Myasoedov, M. E. Huber, M. Hücker, E. Zeldov

AI总结:

该研究开发纳米级低温磁热电成像技术,在WTe₂外尔半金属薄片中实现液氦温区的超高埃廷斯豪森效应与绝对冷却,揭示冷却非单调特性及调控机制,为范德华器件的集成微冷却和温度调控提供新途径。

摘要:

在低温下实现可行的热电冷却对于新型电子器件和量子材料应用具有重要的基础意义与技术价值。与传统的全局冷却相比,器件内部温度控制可提供更高效、更精准的热环境管理。本文开发了磁热电效应的纳米级低温成像技术,并在液氦温度下,在剥离制备的WTe₂外尔半金属薄片中实现了绝对冷却和超高埃廷斯豪森(Ettingshausen)效应。施加电流与垂直磁场后,样品一侧因产生电子-空穴对而实现冷却,另一侧则因电子-空穴复合而发热。与块体材料不同,研究发现该冷却过程随磁场强度和器件尺寸呈非单调变化。所建立的介观半金属器件磁热电模型表明,冷却效率及诱导产生的温度分布由样品几何结构、电子-空穴复合长度、磁场,以及薄片与衬底的热导率之间的相互作用共同调控。这些发现为微型热电冷却的直接集成以及新型范德华器件中的温度分布调控开辟了道路。

英文摘要:

Attaining viable thermoelectric cooling at cryogenic temperatures is of major fundamental and technological interest for novel electronics and quantum materials applications. In-device temperature control can provide a more efficient and precise thermal environment management as compared to the conventional global cooling. Here we develop nanoscale cryogenic imaging of a magneto-thermoelectric effect and demonstrate absolute cooling and an ultrahigh Ettingshausen effect in exfoliated WTe2 Weyl semimetal flakes at liquid He temperatures. Application of a current and perpendicular magnetic field gives rise to cooling via generation of electron-hole pairs on one side of the sample and heating by their recombination at the opposite side. In contrast to bulk materials, the cooling process is found to be nonmonotonic in magnetic field and device size. The derived model of magneto-thermoelectricity in mesoscopic semimetal devices shows that the cooling efficiency and the induced temperature profiles are governed by the interplay between sample geometry, electron-hole recombination length, magnetic field, and flake and substrate heat conductivities. The findings open the way for direct integration of microscopic thermoelectric cooling and for temperature landscape engineering in novel van der Waals devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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