基于碳化硅MOSFET的高速高压推挽开关，用于Bradbury-Nielsen门对高电荷态离子的电荷态分离
Fast Silicon Carbide MOSFET based high-voltage push-pull switch for charge state separation of highly charged ions with a Bradbury-Nielsen Gate
AI总结：
本文研制了一种基于碳化硅MOSFET的推挽式高速高压开关，可切换600V电压、10ns升降时间，用于Bradbury-Nielsen门快速分离高电荷态离子，分辨能力约100。
摘要：
本文报道了一种高速高压开关的研制，该开关基于两个增强型N沟道碳化硅金属氧化物半导体场效应晶体管，采用推挽配置。该开关能够在电容性负载上切换高达600 V的高电压，上升和下降时间约为10 ns，脉冲宽度≤20 ns。利用该开关，已证明可以从电子束离子阱中 ejected 的具有特定动能的高电荷态离子束的电荷态分布中，通过快速切换施加在Bradbury-Nielsen门上的高电压，以约100的分辨能力分离出单一电荷态。
英文摘要：
In this paper we report on the development of a fast high-voltage switch, which is based on two enhancement mode N-channel Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors in push-pull configuration. The switch is capable of switching high voltages up to 600 V on capacitive loads with rise and fall times on the order of 10 ns and pulse widths $\leq$ 20 ns. Using this switch it was demonstrated that from the charge state distribution of bunches of highly charged ions ejected from an electron beam ion trap with a specific kinetic energy, single charge states can be separated by fast switching of the high voltage applied to a Bradbury-Nielsen Gate with a resolving power of about 100.
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