氚在石墨烯上吸附的演示
Demonstration of tritium adsorption on graphene
AI总结：
本文通过将单层石墨烯暴露于高压 T₂，结合原位电阻、Raman 映射与热退火实验，证明氚可化学吸附并部分氚化石墨烯，且结构变化基本可逆。
摘要：
在这项工作中，我们报告了在受控环境中将石墨烯暴露于氚气的研究。置于 SiO₂/Si 衬底上的单层石墨烯被暴露于 400 mbar 的 T₂ 中，总时长约 55 小时。在氚暴露期间，采用 Van der Pauw 方法原位测量石墨烯样品的电阻率。我们发现，在暴露过程中方块电阻增加了三个数量级，表明氚发生了显著的化学吸附。暴露后，通过共聚焦 Raman 显微镜进行空间化学映射，对样品进行非原位表征，以研究氚对石墨烯结构的影响（氚化产生 T-graphene），以及石墨烯膜整个区域内改性的均匀性。氚暴露后的 Raman 光谱与其他团队此前在载氢实验中观察到的结果相当。通过热退火，并利用 Raman 光谱分析，我们还证明结构变化在很大程度上是可逆的。综合所有观察结果，我们得出结论：在氚暴露期间，石墨烯膜至少发生了部分氚化，并且石墨烯膜总体上承受住了来自氚 β 衰变电子以及高能一次离子和二次离子的轰击。
英文摘要：
In this work, we report on studies of graphene exposed to tritium gas in a controlled environment. The single layer graphene on a $\textrm{SiO}_2$/Si substrate was exposed to 400 mbar of $\textrm{T}_2$ for a total time of $\approx$ 55 h. The resistivity of the graphene sample was measured $\textit{in situ}$ during tritium exposure using the Van der Pauw method. We found that the sheet resistance increases by three orders of magnitude during the exposure, suggesting significant chemisorption of tritium. After exposure, the samples were characterised $\textit{ex situ}$ via spatio-chemical mapping with a confocal Raman microscope, to study the effect of tritium on the graphene structure (tritiation yielding T-graphene), as well as the homogeneity of modifications across the whole area of the graphene film. The Raman spectra after tritium exposure were comparable to previously observed results in hydrogen-loading experiments, carried out by other groups. By thermal annealing we also could demonstrate, using Raman spectral analysis, that the structural changes were largely reversible. Considering all observations, we conclude that the graphene film was at least partially tritiated during the tritium exposure, and that the graphene film by and large withstands the bombardment by electrons from the $β$-decay of tritium, as well as by energetic primary and secondary ions.
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