外延薄膜和霍尔条器件中关联层状钌酸盐Sr$_3$Ru$_2$O$_7$的磁输运性质
Magnetotransport Properties of Epitaxial Films and Hall Bar Devices of the Correlated Layered Ruthenate Sr$_3$Ru$_2$O$_7$
AI总结：
本研究通过外延Sr$_3$Ru$_2$O$_7$薄膜及霍尔条器件，发现图案化可显著增强磁电阻（最高140%），并实现磁场方向控制的正负磁电阻切换，为关联钌酸盐器件物理提供新途径。
摘要：
对于通过脉冲激光沉积生长的外延Sr$_3$Ru$_2$O$_7$薄膜，我们报告了在同一薄膜上并排图案化的薄膜和霍尔条器件的结构与磁输运联合研究。利用X射线衍射和高分辨率透射电子显微镜研究了这些薄膜的结构性质，并确认这些薄膜具有外延取向且几乎为纯相。对于沿c轴施加的磁场，未图案化的Sr$_3$Ru$_2$O$_7$薄膜测得10%的正磁电阻，而对于沟道宽度为10和5 μm的图案化霍尔条器件，分别测得40%和140%的磁电阻值。这些薄膜表现出由外加磁场方向控制的正磁电阻到负磁电阻的切换行为。本结果为实现关联层状锶钌酸盐中间成员稳定外延合成以及探索这些化合物薄膜中的器件物理提供了一条有前景的途径。
英文摘要：
For epitaxial Sr$_3$Ru$_2$O$_7$ films grown by pulsed laser deposition, we report a combined structural and magnetotransport study of thin films and Hall bar devices patterned side-by-side on the same film. Structural properties of these films are investigated using X-ray diffraction and high-resolution transmission electron microscopy, and confirm that these films are epitaxially oriented and nearly phase pure. For magnetic fields applied along the $c-$axis, a positive magnetoresistance of 10\% is measured for unpatterned Sr$_3$Ru$_2$O$_7$ films, whereas for patterned Hall bar devices of channel widths of $10$ and $5\, μ$m, magnetoresistance values of 40\% and 140\% are found, respectively. These films show switching behaviors from positive to negative magnetoresistance that are controlled by the direction of the applied magnetic field. The present results provide a promising route for achieving stable epitaxial synthesis of intermediate members of correlated layered strontium ruthenates, and for the exploration of device physics in thin films of these compounds.
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