在节线半金属NaAlGe中通过空穴掺杂诱导的超导电性
Superconductivity induced by doping holes in the nodal-line semimetal NaAlGe
AI总结：
该研究针对节线半金属NaAlGe的赝能隙起源不明问题，通过Zn空穴掺杂调控其固溶体基态，发现赝能隙随掺杂量增加被抑制并出现最高2.8 K的超导穹顶，推测该超导电性源于激子涨落。
摘要：
节线半金属NaAlSi和NaAlGe尽管电子结构相似，却具有截然不同的基态：NaAlSi在7 K以下表现出超导电性，而NaAlGe在低温下表现出半导体导电性，表明其在约100 K处形成了赝能隙。NaAlGe中赝能隙的起源尚不清楚，但可能与激子不稳定性相关。我们研究了固溶体Na(Al₁₋ₓZnₓ)Ge中空穴掺杂对基态的影响，发现随着Zn含量增加，赝能隙被持续抑制，随后出现超导穹顶，其最高转变温度为2.8 K。这种超导电性极有可能源于激子涨落。
英文摘要：
The nodal-line semimetals NaAlSi and NaAlGe have significantly different ground states despite having similar electronic structures: NaAlSi exhibits superconductivity below 7 K, while NaAlGe exhibits semiconductive electrical conductivity at low temperatures, indicating the formation of a pseudogap at approximately 100 K. The origin of the pseudogap in NaAlGe is unknown but may be associated with excitonic instability. We investigated hole-doping effects on the ground state in the solid solution Na(Al1-xZnx)Ge and discovered that the pseudogap is suppressed continuously with increasing Zn content, followed by the appearance of a superconducting dome with the highest transition temperature of 2.8 K. This superconductivity most likely results from excitonic fluctuations.
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