GaAs纳米脊激光二极管在300 mm CMOS试验线上的全制造
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
AI总结：
在300 mm CMOS试验线上全制造了首批电驱动GaAs基多量子阱激光二极管，展示了室温连续波激射及优异性能，验证了III-V/Si纳米脊单片集成概念在硅光子学中的潜力。
摘要：
硅光子学是一项快速发展的技术，有望彻底改变我们通信、计算和感知世界的方式。然而，缺乏高度可扩展的原生CMOS集成光源是阻碍其广泛应用的主要因素之一。尽管在硅上混合和异质集成III-V光源方面取得了重大进展，但通过直接外延生长III-V材料实现单片集成仍然是实现高性价比片上光源的顶峰。在此，我们报道了首批在CMOS试制线上于300 mm硅晶圆上全制造的电驱动GaAs基多量子阱激光二极管。利用具有纵横比捕获的选择性区域外延技术，在晶圆级高质量地生长了内嵌p-i-n二极管、InGaAs量子阱和InGaP钝化层的GaAs纳米脊波导。经过III-V端面图形化和标准CMOS接触金属化后，在晶圆上超过三百个器件中展示了室温下约1020 nm波长的连续波激射，其阈值电流低至5 mA，输出功率超过1 mW，激光线宽低至46 MHz，激光器工作温度高达55 °C。这些结果展示了III-V/Si纳米脊工程概念在硅光子学平台单片集成激光二极管方面的潜力，为未来在光学传感、互连及其他领域的成本敏感型大批量应用铺平了道路。
英文摘要：
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors hampering its widespread adoption. Despite significant progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxial growth of III-V materials remains the pinnacle in realizing cost-effective on-chip light sources. Here, we report the first electrically driven GaAs-based multi-quantum-well laser diodes fully fabricated on 300 mm Si wafers in a CMOS pilot manufacturing line. GaAs nano-ridge waveguides with embedded p-i-n diodes, InGaAs quantum wells and InGaP passivation layers are grown with high quality at wafer scale, leveraging selective-area epitaxy with aspect-ratio trapping. After III-V facet patterning and standard CMOS contact metallization, room-temperature continuous-wave lasing is demonstrated at wavelengths around 1020 nm in more than three hundred devices across a wafer, with threshold currents as low as 5 mA, output powers beyond 1 mW, laser linewidths down to 46 MHz, and laser operation up to 55 °C. These results illustrate the potential of the III-V/Si nano-ridge engineering concept for the monolithic integration of laser diodes in a Si photonics platform, enabling future cost-sensitive high-volume applications in optical sensing, interconnects and beyond.
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