碳化硅纳米结构对太赫兹辐射的记录
Registration of terahertz irradiation with silicon carbide nanostructures
AI总结：
研究碳化硅纳米结构在室温下对太赫兹辐射的响应，基于量子法拉第效应模型解释边缘通道电流产生及纵向电压特征，并通过EDEPR揭示内部太赫兹辐射。
摘要：
研究了通过硅原子替代法制备的碳化硅纳米结构对外部太赫兹（THz）辐射的响应。在室温下，通过改变霍尔几何结构器件中的漏源电流，记录了纵向电压的动力学依赖关系。在基于量子法拉第效应的模型框架内，入射辐射导致边缘通道中产生电流，伴随磁通量子数变化，并在纵向电压的动力学依赖中表现出特征。通过电检测电子顺磁共振（EDEPR）测量纵向电压随磁场值的变化，揭示了碳化硅纳米结构内部固有太赫兹辐射的产生。
英文摘要：
The response to external terahertz (THz) irradiation from the silicon carbide nanostructures prepared by the method of substitution of atoms on silicon is investigated. The kinetic dependence of the longitudinal voltage is recorded at room temperature by varying the drain-source current in the device structure performed in a Hall geometry. In the frameworks of proposed model based on the quantum Faraday effect the incident radiation results in the appearance of a generated current in the edge channels with a change in the number of magnetic flux quanta and in the appearance of features in the kinetic dependence of the longitudinal voltage. The generation of intrinsic terahertz irradiation inside the silicon carbide nanostructures is also revealed by the electrically-detected electron paramagnetic resonance (EDEPR) measured the longitudinal voltage as a function of the magnetic field value.
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