水插层诱导的非凡光致发光的大面积单层WS2单晶、薄膜和异质结的可靠合成
Reliable Synthesis of Large-Area Monolayer WS2 Single Crystals, Films, and Heterostructures with Extraordinary Photoluminescence Induced by Water Intercalation
AI总结：
本研究开发了一种可控的CVD工艺，通过使用盐酸、硫酸和王水清洗反应管，实现了大面积单层WS2单晶、薄膜及面内石墨烯-WS2异质结的可靠合成，并发现环境水插层可诱导单晶边缘产生非凡光致发光。
摘要：
二维（2D）过渡金属硫族化合物（TMDs）因其独特的电子、光学和力学性能，在未来低能耗光电子学领域具有巨大潜力。化学气相沉积（CVD）是广泛用于合成大面积TMDs的技术。然而，由于对生长环境的高度敏感性，通过CVD可靠地合成单层TMDs仍然具有挑战性。在此，我们开发了一种可控的CVD工艺，通过使用盐酸、硫酸和王水清洗反应管，实现了大面积单层WS2晶体、薄膜以及面内石墨烯-WS2异质结的合成。这种简便的清洗过程能够去除附着在CVD反应管和坩埚上的残留污染物，降低成核密度，同时增加WS2物质的扩散长度。WS2单晶和薄膜的光致发光（PL）映射表明，三角形单晶边缘周围的非凡PL是由WS2-蓝宝石界面处的环境水插层引起的。这种非凡PL可以通过选择具有不同润湿性的基底来控制。
英文摘要：
Two-dimensional (2D) transition metal dichalcogenides (TMDs) hold great potential for future low-energy optoelectronics owing to their unique electronic, optical, and mechanical properties. Chemical vapor deposition (CVD) is the technique widely used for the synthesis of large-area TMDs. However, due to high sensitivity to the growth environment, reliable synthesis of monolayer TMDs via CVD remains challenging. Here we develop a controllable CVD process for large-area synthesis of monolayer WS2 crystals, films, and in-plane graphene-WS2 heterostructures by cleaning the reaction tube with hydrochloric acid, sulfuric acid and aqua regia. The concise cleaning process can remove the residual contaminates attached to the CVD reaction tube and crucibles, reducing the nucleation density but enhancing the diffusion length of WS2 species. The photoluminescence (PL) mappings of a WS2 single crystal and film reveal that the extraordinary PL around the edges of a triangular single crystal is induced by ambient water intercalation at the WS2-sapphire interface. The extraordinary PL can be controlled by the choice of substrates with different wettabilities.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
