坏金属跳跃区中Mn掺杂GeSnTe半导体的外禀反常霍尔效应
Extrinsic Anomalous Hall effect in Mn Doped GeSnTe Semiconductors in the Bad Metal Hopping Regime
AI总结：
研究Mn掺杂GeSnTe在坏金属跳跃区的高场磁输运，揭示外禀反常霍尔效应主要来自side jump，并由σxy~σxx^1.6标度支持。
摘要：
我们展示了对Ge1-x-y(SnxMny)Te块体多铁材料的高场磁输运研究，其中抗磁性Sn和顺磁性Mn的浓度分别为x=0.38至0.79和y=0.02至0.086。零场电阻率ρ(T)在T=20 K以下受到缺陷的显著贡献；而在T=20 K至300 K范围内，可估计出来自动态无序和异常来源的混合散射贡献。载流子迁移率表现出从T^0.2到T^0.5的反常温度依赖，这暗示可能存在由空穴与声子耦合所导致的极化子效应。这种反常行为无法用高温下的纯声子散射机制来理解。从高场结果的角度来看，磁电阻率的横向分量体现了起源于外禀散射源的反常霍尔效应，尤其是side jump（侧跳）机制显示出更大的贡献。我们还发现，横向电导率与纵向电导率之间的关联遵循普适标度律σxy ~ σxx^n，在低电导率极限下n=1.6。当前GSMT合金得到的n=1.5至1.8数值证明了坏金属跳跃区，因为这些结果属于σxx约为10^4 ohm^-1 cm^-1的低电导率铁磁家族。迄今为止，低电导率区中n=1.6标度的解释尚未被完全理解。然而，反常霍尔电阻率采用Tian等人修正关系的标度表明，side jump散射占主导，同时skew scattering（斜散射）也发挥显著作用。
英文摘要：
We present high field magnetotransport studies of Ge1-x-y(SnxMny)Te bulk multiferroics with diamagnetic Sn and paramagnetic Mn concentration x = 0.38 to 0.79 and y = 0.02 to 0.086, respectively. The zero field resistivity, ρ(T) takes significant contribution from defects below T = 20 K however, a mixed scattering contribution from dynamic disorder and unusual sources is estimated from T = 20 K to 300 K. The carrier mobility shows anomalous temperature dependence from T0.2 to T0.5 which hints towards possible presence of polaronic effects resulting from coupling of holes with phonons. This anomalous behavior cannot be understood in terms of pure phononic scattering mechanism at high temperature. From point of view of high field results, the transverse component of magnetoresistivity manifests anomalous Hall effect originating from extrinsic scattering sources, particularly the side jump mechanism reveals a larger contribution. We also find that the correlation between the transverse and longitudinal conductivities follow the universal scaling law σxy ~ σxxn where n = 1.6 in the low conductivity limit. The values n = 1.5 to 1.8 obtained for the present GSMT alloys justify the bad metal hopping regime since the results fall in the low conductivity ferromagnetic family with σxx ~ 104 ohmcm-1. The interpretation of the n = 1.6 scaling in the low conductivity regime is thus far not fully understood. However, the anomalous Hall resistivity scaling with modified relation by Tian et al is indicative of the dominant side jump scattering along with noticeable role of skew scattering.
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