稳健大气稳定的SrVO3/石墨烯//SrTiO3混合模板用于复杂氧化物快速便捷大面积转移至硅衬底
Robust atmospherically stable hybrid SrVO3/Graphene//SrTiO3 template for fast and facile large-area transfer of complex oxides onto Si
AI总结：
本文提出以CVD石墨烯与PLD水溶性SrVO3组成的混合牺牲层模板，在保持大气稳定性的同时将溶解速率提升十倍以上，并成功转移BTO和PZT铁电薄膜至目标衬底，验证了其铁电性能与广泛器件应用潜力。
摘要：
复杂外延氧化物在Si及其他目标衬底上的异质集成近年来日益受到关注。一种流行的方法是在界面处生长水溶性且高反应活性的牺牲缓冲层（如Sr3Al2O6（SAO）），并在其上生长功能氧化物。为提高层转移技术的通用性，人们希望在不牺牲转移速率的前提下使用稳定（反应性较低）的牺牲层。在本研究中，我们采用化学气相沉积（CVD）石墨烯作为界面处的二维材料，并以脉冲激光沉积（PLD）的水溶性SrVO3（SVO）作为牺牲缓冲层。我们证明，石墨烯层在不损害其大气稳定性的情况下，将SVO的溶解速率提高了十倍以上。我们通过PLD生长铁电BaTiO3（BTO）和通过化学溶液沉积（CSD）技术生长Pb(Zr, Ti)O3（PZT），并将其转移到目标衬底上并确认其铁电性能，从而展示了混合模板的通用性。我们的混合模板使复杂氧化物在MEMS、电光器件和柔性电子等众多器件应用中的潜力得以实现。
英文摘要：
Heterogenous integration of complex epitaxial oxides onto Si and other target substrates is recently gaining traction. One of the popular methods involves growing a water-soluble and highly reactive sacrificial buffer layer, such as Sr3Al2O6 (SAO) at the interface, and a functional oxide on top of this. To improve the versatility of layer transfer techniques, it is desired to utilize stable (less reactive) sacrificial layers, without compromising on the transfer rates. In this study, we utilized a combination of chemical vapor deposited (CVD) graphene as a 2D material at the interface and pulsed laser deposited (PLD) water-soluble SrVO3 (SVO) as a sacrificial buffer layer. We show that the graphene layer enhances the dissolution rate of SVO over ten times without compromising its atmospheric stability. We demonstrate the versatility of our hybrid template by growing ferroelectric BaTiO3 (BTO) via PLD and Pb(Zr, Ti)O3 (PZT) via Chemical Solution Deposition (CSD) technique and transferring them onto the target substrates and establishing their ferroelectric properties. Our hybrid templates allow for the realization of the potential of complex oxides in a plethora of device applications for MEMS, electro-optics, and flexible electronics.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
