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arXiv 2307.01433cond-mat.supr-con
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用于高密度低温存储的电控混合超导体-铁磁体单元

Electrically-controlled hybrid superconductor-ferromagnet cell for high density cryogenic memory

Ivan Nevirkovets, Oleg Mukhanov

AI总结:

本文提出并验证了一种SISFS电控混合超导-铁磁体单元,利用电流改变铁磁层磁化状态以调控约瑟夫森结临界电流的磁场调制特性,从而实现与单磁通量子电子学兼容的高密度低温存储。

摘要:

我们报告了在4.2 K温度下制备并测试的一种SISFS器件,其中S、F和I分别表示超导体(Nb)、铁磁材料(坡莫合金)和绝缘体(AlOx)。F层覆盖SIS约瑟夫森结顶电极约一半的面积,并且位置偏离中心。沿S电极流动的电流I_tr能够以如下方式改变F层的磁化状态:对于I_tr的一个方向,磁通量垂直于各层穿透结区;而对于相反方向,垂直磁通量可以被移除。在前一种状态下,约瑟夫森临界电流Ic在磁场H中的调制图案可能在H=0附近出现极小值,并在第二种状态下恢复其通常的具有极大值的形状。这些状态可用于构建与单磁通量子电子学兼容的紧凑型低温存储器。

英文摘要:

We report the fabrication and testing, at 4.2 K, of an SISFS device, where S, F, and I denote a superconductor (Nb), a ferromagnetic material (permalloy), and an insulator (AlOx), respectively. The F layer covers about one half of the top electrode of the SIS Josephson junction and is positioned off-center. Electric current, I _tr, along the S electrode can change the magnetization of the F layer in such a way that, for one direction of I_tr, a magnetic flux penetrates the junction perpendicular to the layers, whereas for the opposite direction, the perpendicular magnetic flux can be removed. In the former state, the modulation pattern of the Josephson critical current, Ic, in the magnetic field, H, may acquire minimum near H=0, and restores its usual shape with maximum in the second state. These states can be used for building a compact cryogenic memory compatible with single flux quantum electronics.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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