用于柔性电子器件的自钝化自支撑超导氧化物薄膜
Self-passivated freestanding superconducting oxide film for flexible electronics
AI总结：
本文提出一种无缓冲层转移水敏感YBCO薄膜到柔性基底的新方法，通过刻蚀Sr3Al2O6牺牲层获得自支撑YBCO薄膜，并揭示其自钝化保护机制，为柔性氧化物薄膜器件应用开辟新途径。
摘要：
将高温超导YBa2Cu3O6+x（YBCO）集成到柔性电子器件中有望给技术产业带来革命性变化。因此，高质量柔性YBCO薄膜的有效制备在这一发展中起着关键作用。我们提出了一种在没有任何缓冲层的情况下将水敏感YBCO薄膜转移到柔性基底上的新方法。通过从LaAlO3基底上刻蚀Sr3Al2O6牺牲层，获得了聚二甲基硅氧烷基底上的自支撑YBCO薄膜。除了所获得的自支撑YBCO薄膜具有89.1 K的Tc外，自支撑YBCO薄膜在内弯和外弯条件下的Tc分别为89.6 K和88.9 K。利用高分辨透射电子显微镜、扫描电子显微镜、拉曼光谱和X射线吸收光谱等多种实验技术进行了全面表征，以研究YBCO薄膜在提取过程前后的形貌、结构和电子性质，结果表明自支撑YBCO的结构和超导性质几乎保持在其原始状态。进一步研究表明，YBCO钝化层的形成起到了保护层的作用，在刻蚀过程中有效保护了自支撑YBCO的内部区域。这项工作在实现柔性氧化物薄膜的制备方面发挥了关键作用，并为涉及薄膜和低维材料的多种器件应用开辟了新的可能性。
英文摘要：
The integration of high-temperature superconducting YBa2Cu3O6+x (YBCO) into flexible electronic devices has the potential to revolutionize the technology industry. The effective preparation of high-quality flexible YBCO films therefore plays a key role in this development. We present a novel approach for transferring water-sensitive YBCO films onto flexible substrates without any buffer layer. Freestanding YBCO film on a polydimethylsiloxane substrate is extracted by etching the Sr3Al2O6 sacrificial layer from the LaAlO3 substrate. In addition to the obtained freestanding YBCO thin film having a Tc of 89.1 K, the freestanding YBCO thin films under inward and outward bending conditions have Tc of 89.6 K and 88.9 K, respectively. A comprehensive characterization involving multiple experimental techniques including high-resolution transmission electron microscopy, scanning electron microscopy, Raman and X-ray Absorption Spectroscopy is conducted to investigate the morphology, structural and electronic properties of the YBCO film before and after the extraction process where it shows the preservation of the structural and superconductive properties of the freestanding YBCO virtually in its pristine state. Further investigation reveals the formation of a YBCO passivated layer serves as a protective layer which effectively preserves the inner section of the freestanding YBCO during the etching process. This work plays a key role in actualizing the fabrication of flexible oxide thin films and opens up new possibilities for a diverse range of device applications involving thin-films and low-dimensional materials.
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