直接带隙半导体CdGeAs$_{2}$中电子波函数的平凡几何相位
A Trivial Geometrical Phase of an Electron Wavefunction in a Direct Band Gap Semiconductor CdGeAs$_{2}$
AI总结：
本研究针对直接带隙半导体CdGeAs₂的电输运特性展开，通过磁阻与磁导率分析，发现其存在三维弱局域化现象、多载流子输运及弱自旋轨道耦合，为理解该材料的量子输运行为提供了实验依据。
摘要：
黄铜矿化合物因其奇异的拓扑相位及相关现象已在各类实验中得到广泛研究。本文探讨了直接带隙半导体CdGeAs$_{2}$的电输运特性。实验观测到，在温度1.8 K、磁场14 T的条件下，横向磁阻（MR）约为136%，符合半经典指数关系MR $\backsim$ $B^{2.18}$。磁阻分析显示其违反科勒（Kohler）定则，表明该体系中存在多载流子参与的输运过程。在15 K以下，随着磁场减小，磁阻上升，呈现出著名的量子干涉现象——弱局域化（WL）。基于Hikami-Larkin-Nagaoka（HLN， hikami- Larkin -长冈）模型对磁导率数据的分析揭示，CdGeAs$_{2}$中的弱局域化具有三维特性，且其自旋轨道耦合较弱。相位相干长度满足$L_\u03d5$ $\backsim$ $T^{-0.66}$的幂律关系，进一步佐证了观测到的弱局域化特征的三维属性。
英文摘要：
Chalcopyrite compounds are extensively explored for their exotic topological phases and associated phenomena in a variety of experiments. Here, we discuss the electrical transport properties of a direct energy gap semiconductor CdGeAs$_{2}$. The observed transverse magnetoresistance (MR) is found to be around 136% at a temperature of 1.8 K and a magnetic field of 14 T, following the semiclassical exponent MR $\sim$ $B^{2.18}$. The MR analysis exhibits a violation of the Kohler rule, suggesting the involvement of multiple carriers in the system. Below 15 K, with decreasing magnetic field, the MR increases, leading to the well known quantum interference phenomenon weak localization (WL). The analysis of the magnetoconductivity data based on the Hikami-Larkin-Nagaoka (HLN) model unveils three dimensional nature of the WL and the weak spin-orbit coupling in CdGeAs$_{2}$. The phase coherence length follows the $L_ϕ$ $\sim$ $T^{-0.66}$ power law, which exhibits the 3D nature of the observed WL feature.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
