通过鼓泡测试测量二维MoS$_2$与石墨及金属基底之间的粘附性
Adhesion of 2D MoS$_2$ to Graphite and Metal Substrates Measured by a Blister Test
AI总结：
本文通过鼓泡测试测量了MoS₂与金属、半导体及石墨基底的分离功和粘附功，发现二者存在显著差异并归因于粘附滞后，为二维材料器件发展提供了关键实验数据。
摘要：
利用鼓泡测试，我们测量了MoS$_2$薄膜与金属、半导体和石墨基底之间的分离功。我们发现分离功的范围从铬基底的0.11 ± 0.05 J/m²到石墨基底的0.39 ± 0.1 J/m²。此外，我们测量了MoS$_2$薄膜在这些基底上的粘附功，并观察到分离功与粘附功之间存在显著差异，我们将其归因于粘附滞后现象。由于粘附力在二维材料器件的制造和功能中起着重要作用，本文所提供的分离功和粘附功的实验测定将有助于指导其发展。
英文摘要：
Using a blister test, we measured the work of separation between MoS$_2$ membranes from metal, semiconductor, and graphite substrates. We found a work of separation ranging from 0.11 +- 0.05 J/m^2 for chromium to 0.39 +- 0.1 J/m^2 for graphite substrates. In addition, we measured the work of adhesion of MoS$_2$ membranes over these substrates and observed a dramatic difference between the work of separation and adhesion which we attribute to adhesion hysteresis. Due to the prominent role that adhesive forces play in the fabrication and functionality of devices made from 2D materials, an experimental determination of the work of separation and adhesion as provided here will help guide their development.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
