耗散陈绝缘体的拓扑遗产导致的边缘选择性极值阻尼
Edge-selective extremal damping from topological heritage of dissipative Chern insulators
AI总结：
本文证明陈绝缘体在远离平衡时仍能继承拓扑边缘特征，导致非平衡稳态中出现边缘选择性极值阻尼，源于非厄米拓扑与耗散的结合。
摘要：
拓扑物质最重要的实际标志之一是在拓扑不变量不相等的区域界面处存在受拓扑保护的、指数局域化的边缘态。在这里，我们表明，即使当陈绝缘体被驱动远离其平衡基态时，它们也能从其母哈密顿量继承拓扑边缘特征。特别地，我们表明，由Lindblad主方程控制的非平衡稳态的渐近长时间趋近可以表现出边缘选择性的极值阻尼。这一现象源于母陈绝缘体哈密顿量的非厄米扩展的边缘态。（非厄米）拓扑与耗散的结合因此允许设计拓扑鲁棒的、空间局域化的阻尼模式。
英文摘要：
One of the most important practical hallmarks of topological matter is the presence of topologically protected, exponentially localised edge states at interfaces of regions characterised by unequal topological invariants. Here, we show that even when driven far from their equilibrium ground state, Chern insulators can inherit topological edge features from their parent Hamiltonian. In particular, we show that the asymptotic long-time approach of the non-equilibrium steady state, governed by a Lindblad Master equation, can exhibit edge-selective extremal damping. This phenomenon derives from edge states of non-Hermitian extensions of the parent Chern insulator Hamiltonian. The combination of (non-Hermitian) topology and dissipation hence allows to design topologically robust, spatially localised damping patterns.
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