在体材料中保护伊辛自旋-轨道耦合
Protection of Ising spin-orbit coupling in bulk misfit superconductors
AI总结：
研究发现体材料中的错位化合物表现出与单层材料相似的伊辛保护，通过电荷转移等机制实现对磁场的抗性。
摘要：
低维材料具有与本征材料不同的显著特性。一个范例是出现在单层材料如NbSe2中的伊辛超导性，其表现出对泡利极限的强烈违反。在单层中，这是由于破坏的反演对称性和自旋-轨道耦合共同作用，将电子的自旋锁定在平面外。本征NbSe2是中心对称的，因此不是伊辛超导体。我们显示，由单层和双层NbSe2组成的体错位化合物（LaSe）1.14（NbSe2）和（LaSe）1.14（NbSe2）2，尽管形式上具有反演对称性，却表现出意外的伊辛保护，其泡利极限违反程度与单层NbSe2相当。我们通过互补的实验方法结合第一性原理计算研究了这些错位化合物。我们提出了伊辛保护在体材料中生存的理论机制。我们展示了这些机制在这些体化合物中如何通过电荷转移、缺陷、层间跃迁减少和堆叠的协同效应发挥作用。这突显了伊辛超导性可能在体材料中意外出现，并可能使设计对磁场具有抗性的体超导体成为可能。
英文摘要：
Low-dimensional materials have remarkable properties that are distinct from their bulk counterparts. A paradigmatic example is Ising superconductivity that occurs in monolayer materials such as NbSe2 which show a strong violation of the Pauli limit. In monolayers, this occurs due to a combination of broken inversion symmetry and spin-orbit coupling that locks the spins of the electrons out-of-plane. Bulk NbSe2 is centrosymmetric and is therefore not an Ising superconductor. We show that bulk misfit compound superconductors, (LaSe)1.14(NbSe2) and (LaSe)1.14(NbSe2)2, comprised of monolayers and bilayers of NbSe2, exhibit unexpected Ising protection with a Pauli-limit violation comparable to monolayer NbSe2, despite formally having inversion symmetry. We study these misfit compounds using complementary experimental methods in combination with first-principles calculations. We propose theoretical mechanisms of how the Ising protection can survive in bulk materials. We show how some of these mechanisms operate in these bulk compounds due to a concerted effect of charge-transfer, defects, reduction of interlayer hopping, and stacking. This highlights how Ising superconductivity can, unexpectedly, arise in bulk materials, and possibly enable the design of bulk superconductors that are resilient to magnetic fields.
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