NdNiO $_3$神经元电压驱动自维持振荡的动力学
Dynamics of Voltage Driven Self-Sustained Oscillations in NdNiO$_3$ Neuristors
摘要：
有源忆阻器元件，也称为神经电阻器，是自振荡装置，非常接近生物神经元功能，对低功耗神经形态硬件的开发至关重要。表现出与温度超线性相关的传导机制的材料可以导致负微分电阻（NDR）状态，其可以进一步被设计为自振荡器。热失控、绝缘体到金属相变（IMT）可以导致这种超线性，并且在诸如TaO $_x$、NbO $_x$和VO $_2$的系统中被广泛研究。然而，ReNiO $_3$系统，提供大的可调谐性，在金属-绝缘体转变温度的探索至今较少。在这里，我们展示了在MHz频率和低温下，NdNiO $_3$，模型电荷转移绝缘体薄膜上的全或无神经元样自振荡及其频率编码行为。我们研究的温度依赖性的NDR，并表明，它消失，即使在低于IMT温度的温度。我们还表明，阈值电压的规模与设备的大小和一个简单的MEMS设备模型捕捉所有这些突出的特点。与现有模型相比，我们的模型正确地预测了振荡幅度与施加电压的独立性，提供了关于NDR区域中固定点的性质以及非线性振荡的动态的重要见解。关键词：NDR，振荡，热模型。
英文摘要：
Active memristor elements, also called neuristors, are self-oscillating devices that are very good approximations to biological neuronal functionality and are crucial to the development of low-power neuromorphic hardware. Materials that show conduction mechanisms that depend superlinearly with temperature can lead to negative differential resistance (NDR) regimes, which may further be engineered as self-oscillators. Thermal runaway, insulator to metal phase transitions (IMT) can lead to such superlinearity and are being extensively studied in systems such as TaO$_x$, NbO$_x$ and VO$_2$. However, ReNiO$_3$ systems that offer large tunability in metal-insulator transition temperatures are less explored so far. Here we demonstrate all-or-nothing neuron-like self-oscillations at MHz frequency and low temperatures on thin films of NdNiO$_3$, a model charge transfer insulator, and their frequency coding behavior. We study the temperature dependence of NDR and show that it vanishes even at temperatures below the IMT temperature. We also show that the threshold voltages scale with device size and that a simple electrothermal device model captures all these salient features. In contrast to existing models, our model correctly predicts the independence of oscillation amplitude with the applied voltage, offering crucial insights about the nature of fixed points in the NDR region, and the dynamics of non-linear oscillations about them. KEYWORDS: NDR, oscillations, thermal model.
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