VO $_{2}$器件中畴变的近场成像
Near-field imaging of domain switching in in-operando VO$_{2}$ devices
摘要：
由于缺乏可以探测这些器件的电子结构的技术，在新型忆阻器件中的纳米级动态切换的实验见解是有限的。散射扫描近场光学显微镜是一种相对新颖的方法来探测材料的光学响应，其空间分辨率远低于衍射极限。我们使用这种非侵入性的工具来证明，它提供了详细的信息的起源和记忆行为的超薄膜的二氧化钒。同时记录的$I(V)$特性和近场图表明，在I（V）特性的不连续性产生的突然开关的绝缘域金属域。在阈值电压下，畴形成连续的电流通路，当偏压去除后，金属畴仍然存在，但畴界周围出现窄的单斜区域。我们的方法的主要优点是，它提供了详细的信息，电子结构的长度尺度从几十纳米到几十微米，并很容易应用在\textit{in operando}条件下。
英文摘要：
Experimental insight in the nanoscale dynamics underlying switching in novel memristive devices is limited owing to the scarcity of techniques that can probe the electronic structure of these devices. Scattering scanning near-field optical microscopy is a relatively novel approach to probe the optical response of materials with a spatial resolution well below the diffraction limit. We use this non-invasive tool to demonstrate that it provides detailed information on the origin and memory behaviour of ultra-thin films of vanadium dioxide. Simultaneously recorded $I(V)$ characteristics and near-field maps show that discontinuities in the I(V) characteristics arise from the sudden switching of insulating domains to metallic domains. At the threshold voltage, the domains form a continuous current path. The metallic domains persist once the bias voltage is removed, but narrow monoclinic regions appear around the domain boundaries. The key advantage of our approach is that it provides detailed information on the electronic structure at length scales raging from tens of nanometers up to tens of microns and is easily applied under \textit{in operando} conditions.
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