采用新型低损伤 Ga 通量刻蚀制备的 β-Ga₂O₃ 沟槽肖特基二极管
$β$-Ga$_2$O$_3$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching
AI总结：
本研究提出低损伤 Ga 通量刻蚀工艺制备 β-Ga₂O₃ 沟槽肖特基势垒二极管，实现近理想正向特性与超过 5.10 MV/cm 的反向击穿场强。
摘要：
本文展示了通过镓原子束刻蚀技术制备的 β-Ga₂O₃ 沟槽肖特基势垒二极管，其具有优异的场强和功率器件品质因数。沟槽形成通过低损伤 Ga 通量刻蚀完成，该工艺可实现近乎理想的正向工作特性，并且这些特性与鳍片取向无关。器件在 1.45 kV 击穿电压下表现出大于 5.10 MV/cm 的反向击穿场强。该结果证明了 Ga 原子束刻蚀和高质量介电层在提升 β-Ga₂O₃ 垂直功率器件性能方面的潜力。
英文摘要：
$β$-Ga$_2$O$_3$ trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demonstrated. Trench formation was accomplished by a low-damage Ga flux etch that enables near-ideal forward operating characteristics that are independent of fin orientation. The reverse breakdown field strength of greater than 5.10 MV/cm is demonstrated at breakdown voltage as of 1.45 kV. This result demonstrates the potential for Ga atomic beam etching and high-quality dielectric layers for improved performance in $β$-Ga$_2$O$_3$ vertical power devices.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
