硅中载流子迁移率与注入能级和温度的关系的时间分辨THz光谱非接触测量和参数化
Contactless determination and parametrization of charge carrier mobility in silicon as a function of injection level and temperature using time-resolved THz spectroscopy
摘要：
在这里，我们分析了在非接触的方式载流子迁移率作为注入水平和温度的函数在硅中的时间分辨太赫兹光谱（TRTS）和参数化我们的数据由经典的半经验模型的Klaassen和Dorkel & Leturcq。我们的实验结果与Krausse和Dännhauser采用基于接触的方法分析这种现象的开创性工作非常一致。这种协议，验证我们的方法，只能通过考虑载流子扩散效应后，上述带隙近表面泵浦光激发的样品。从我们的结果，在大范围的注射水平，我们得出结论，Klaassen模型是最好的描述在室温下收集的数据。此外，我们还利用TRTS分析了在一定注入水平下，载流子迁移率随温度的变化关系。同样，由Klaassen的经典模型所做的参数化适当地描述了我们的数据，即使没有应用任何拟合参数的必要性（仅以载流子密度作为输入）。在这方面，我们的工作支持Klaassen提出的模型和参数化的有效性，也说明了如何TRTS可以可靠地用于定量测定半导体中的迁移率作为注入水平和温度等关键参数的函数。
英文摘要：
Here, we analyze in a non-contact fashion charge carrier mobility as a function of injection level and temperature in silicon by time resolved THz spectroscopy (TRTS) and parametrize our data by the classical semi-empirical models of Klaassen and Dorkel & Leturcq. Our experimental results are in very good agreement with the pioneering works of Krausse and Dännhauser analyzing this phenomena by employing contact-based methods. This agreement, that validates our methodology, can only be achieved by considering charge carrier diffusion effects following above bandgap near-surface pump photo-excitation of the sample. From our results, obtained over a large range of injection levels, we conclude that the model of Klaassen is the best on describing the collected data at room temperature. Furthermore, we analyze by TRTS the dependence of charge carrier mobility with temperature for a fixed injection level. Once more, the parametrization made by the classical model of Klaassen describe our data appropriately even without the necessity of applying any fitting parameters (just with the charge carrier density as an input). In this respect, our work supports the validity of the model and parametrization proposed by Klaassen, and also illustrate how TRTS can be reliably employed for the quantitative determination of mobility in semiconductors as a function of key parameters as injection level and temperature.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
