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arXiv 2302.07642physics.app-phphysics.pop-ph
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并联功率MOSFET稳态建模

Modeling of parallel power MOSFETs in steady-state

Minh Nhat Huynh, Minh Khoi Nguyen Tien, Cong Toai Truong, Minh Tri Nguyen, Quoc Minh Lam, Van Tu Duong, Huy Hung Nguyen, Tan Tien Nguyen

摘要:

在高功率应用中,多个功率MOSFET并联连接并被视为单个开关,以处理更大的总电流。本文介绍了一种从关断状态到稳态的并联功率MOSFET模型。该模型反映了各功率MOSFET的栅压与电流分布之间的关系。该研究的主要目的是使用该模型来处理这些半导体器件在稳态区域期间共享电流和功率损耗的不对称性。

英文摘要:

In high-power applications, multiple power MOSFETs are connected in parallel and treated as a single switch in order to handle much larger total currents. In this paper, a parallel power MOSFETs model from the turnoff state until they reach their steady state is introduced. The model represents the relationship between each power MOSFET's gate voltage and the current distribution among them. The study's key purpose is to use the model for dealing with the asymmetry in sharing current and power loss between these semiconductor devices during the steady state region.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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